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dc.contributor.authorFernandes, J.M.
dc.contributor.authorKiran, M.R.
dc.contributor.authorUlla, H.
dc.contributor.authorSatyanarayan, M.N.
dc.contributor.authorUmesh, G.
dc.identifier.citationSuperlattices and Microstructures, 2015, Vol.83, , pp.766-775en_US
dc.description.abstractThe charge carrier transport is studied in N,N?-di(1-naphthyl)-N,N?-diphenyl-(1,1?-biphenyl)-4,4?-diamine (?-NPD) with the incorporation of sequentially doped p-type dopant 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) as hole-injection layer in hole-only device structures. The field dependent mobility of the charge carriers is determined using frequency dependent capacitance, conductance and impedance methods by varying the thickness of ?-NPD. The Poole-Frenkel zero-field mobility and the Poole-Frenkel coefficient thus obtained for each device in all the three methods is found to be almost constant. 2015 Elsevier Ltd. All rights reserved.en_US
dc.titleInvestigation of hole transport in ?-NPD using impedance spectroscopy with F4TCNQ as hole-injection layeren_US
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