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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Fernandes, J.M. | |
| dc.contributor.author | Kiran, M.R. | |
| dc.contributor.author | Ulla, H. | |
| dc.contributor.author | Satyanarayan, M.N. | |
| dc.contributor.author | Umesh, G. | |
| dc.date.accessioned | 2020-03-31T08:35:34Z | - |
| dc.date.available | 2020-03-31T08:35:34Z | - |
| dc.date.issued | 2015 | |
| dc.identifier.citation | Superlattices and Microstructures, 2015, Vol.83, , pp.766-775 | en_US |
| dc.identifier.uri | http://idr.nitk.ac.in/jspui/handle/123456789/11763 | - |
| dc.description.abstract | The charge carrier transport is studied in N,N?-di(1-naphthyl)-N,N?-diphenyl-(1,1?-biphenyl)-4,4?-diamine (?-NPD) with the incorporation of sequentially doped p-type dopant 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) as hole-injection layer in hole-only device structures. The field dependent mobility of the charge carriers is determined using frequency dependent capacitance, conductance and impedance methods by varying the thickness of ?-NPD. The Poole-Frenkel zero-field mobility and the Poole-Frenkel coefficient thus obtained for each device in all the three methods is found to be almost constant. 2015 Elsevier Ltd. All rights reserved. | en_US |
| dc.title | Investigation of hole transport in ?-NPD using impedance spectroscopy with F4TCNQ as hole-injection layer | en_US |
| dc.type | Article | en_US |
| Appears in Collections: | 1. Journal Articles | |
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