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|Title:||Fabrication and characterization of thermal evaporated n-Si/ p-ZnTe thin film heterojunction diodes|
|Citation:||Current Applied Physics, 2013, Vol.13, 1, pp.298-301|
|Abstract:||The paper reports the fabrication and detailed electrical characterization of thermal evaporated n-Si/p-ZnTe thin film heterojunction diodes. The heterojunction diodes were prepared by depositing ZnTe films on n-Si substrates. The conduction mechanism, barrier height, space charge density and width of the depletion region were determined by I-V and C-V characteristics of the heterojunction diodes. The bandgap and activation energies of n-Si and p-ZnTe were also determined and a theoretical band diagram of n-Si/p-ZnTe heterojunction was drawn based on Anderson's model. 2012 Elsevier B.V. All rights reserved.|
|Appears in Collections:||1. Journal Articles|
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