Please use this identifier to cite or link to this item:
https://idr.nitk.ac.in/jspui/handle/123456789/10949Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lokesh, R. | - |
| dc.contributor.author | Udayashankar, N.K. | - |
| dc.contributor.author | Asokan, S. | - |
| dc.date.accessioned | 2020-03-31T08:23:26Z | - |
| dc.date.available | 2020-03-31T08:23:26Z | - |
| dc.date.issued | 2010 | - |
| dc.identifier.citation | Journal of Non-Crystalline Solids, 2010, Vol.356, 44049, pp.321-325 | en_US |
| dc.identifier.uri | http://idr.nitk.ac.in/jspui/handle/123456789/10949 | - |
| dc.description.abstract | Studies on the electrical switching behavior of melt quenched bulk Si15Te85-xSbx glasses have been undertaken in the composition range (1 ? x ? 10), in order to understand the effect of Sb addition on the electrical switching behavior of Si15Te85-x base glass. It has been observed that all the Si15Te85-xSbx glasses studied exhibit a smooth memory type switching. Further, the switching voltages are found to decrease almost linearly with Sb content, which indicates that the metallicity of the dopant plays a dominant role in this system compared to network connectivity/rigidity. The thickness dependence of switching voltage (Vth) indicates a clear thermal origin for the switching mechanism. The temperature variation of switching voltages reveals that the Si15Te85-xSbx glasses studied have a moderate thermal stability. 2009 Elsevier B.V. All rights reserved. | en_US |
| dc.title | Electrical switching behavior of bulk Si15Te85-xSbx chalcogenide glasses - A study of compositional dependence | en_US |
| dc.type | Article | en_US |
| Appears in Collections: | 1. Journal Articles | |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.