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dc.contributor.authorLokesh, R.-
dc.contributor.authorUdayashankar, N.K.-
dc.contributor.authorAsokan, S.-
dc.identifier.citationJournal of Non-Crystalline Solids, 2010, Vol.356, 44049, pp.321-325en_US
dc.description.abstractStudies on the electrical switching behavior of melt quenched bulk Si15Te85-xSbx glasses have been undertaken in the composition range (1 ? x ? 10), in order to understand the effect of Sb addition on the electrical switching behavior of Si15Te85-x base glass. It has been observed that all the Si15Te85-xSbx glasses studied exhibit a smooth memory type switching. Further, the switching voltages are found to decrease almost linearly with Sb content, which indicates that the metallicity of the dopant plays a dominant role in this system compared to network connectivity/rigidity. The thickness dependence of switching voltage (Vth) indicates a clear thermal origin for the switching mechanism. The temperature variation of switching voltages reveals that the Si15Te85-xSbx glasses studied have a moderate thermal stability. 2009 Elsevier B.V. All rights reserved.en_US
dc.titleElectrical switching behavior of bulk Si15Te85-xSbx chalcogenide glasses - A study of compositional dependenceen_US
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