Please use this identifier to cite or link to this item: https://idr.nitk.ac.in/jspui/handle/123456789/10784
Full metadata record
DC FieldValueLanguage
dc.contributor.authorNavya, K.
dc.contributor.authorBharath, S.P.
dc.contributor.authorBangera, K.V.
dc.contributor.authorShivakumar, G.K.
dc.date.accessioned2020-03-31T08:23:04Z-
dc.date.available2020-03-31T08:23:04Z-
dc.date.issued2018
dc.identifier.citationMaterials Research Express, 2018, Vol.5, 9, pp.-en_US
dc.identifier.urihttp://idr.nitk.ac.in/jspui/handle/123456789/10784-
dc.description.abstractTransparent IxT1-xO (x = 0 to 1) alloyed thin films were deposited by spray pyrolysis technique at a substrate temperature of 400 C. The effect of incorporation of indium on structural, optical and electrical properties of tin oxide thin films were studied. Characterization of thin films was carried out using x-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive x-ray spectroscopy (EDAX), UV-Visible absorption spectroscopy. XRD results revealed that IxT1-xO thin films were polycrystalline in nature with good crystallinity. Incorporation of indium effectively modifies the surface morphology of the films. The band gap was varied from 3.7 eV to 3 eV. Maximum electrical conductivity of 44.52 103 ?-1 m-1 and transmittance of 90% is obtained for I0.5T0.5O films, hence can be used as highly transparent and conducting electrodes. 2018 IOP Publishing Ltd.en_US
dc.titleEffect of indium content on the characteristics of indium tin oxide thin filmsen_US
dc.typeArticleen_US
Appears in Collections:1. Journal Articles

Files in This Item:
There are no files associated with this item.


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.