Please use this identifier to cite or link to this item: https://idr.nitk.ac.in/jspui/handle/123456789/10200
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dc.contributor.authorMahesha, M.G.-
dc.contributor.authorKasturi, V.B.-
dc.contributor.authorShivakumar, G.K.-
dc.date.accessioned2020-03-31T08:18:43Z-
dc.date.available2020-03-31T08:18:43Z-
dc.date.issued2008-
dc.identifier.citationTurkish Journal of Physics, 2008, Vol.32, 3, pp.151-156en_US
dc.identifier.urihttp://idr.nitk.ac.in/jspui/handle/123456789/10200-
dc.description.abstractA study has been made on the behavior of Al/p-CdTe thin film junction grown by thermal evaporation method. I-V characteristics show that the Al makes Schottky contact with p-CdTe. The variation of junction capacitance with frequency and voltage has been studied to evaluate the barrier height. The activation energy and band gap have been estimated by studying variation of resistivity with temperature. Using all these data, band diagram of Al/p-CdTe has been proposed. T B?TAK.en_US
dc.titleCharacterization of thin film Al/p-CdTe schottky diodeen_US
dc.typeArticleen_US
Appears in Collections:1. Journal Articles

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