Effect of substrate temperature and film thickness on the thermoelectric properties of In2Te3 thin films
dc.contributor.author | Sowjanya, V. | |
dc.contributor.author | Bangera, K.V. | |
dc.contributor.author | Shivakumar, G.K. | |
dc.date.accessioned | 2020-03-31T08:23:14Z | |
dc.date.available | 2020-03-31T08:23:14Z | |
dc.date.issued | 2017 | |
dc.description.abstract | Herein, the thermoelectric properties of vacuum deposited In2Te3 thin films were investigated by varying the substrate temperature and the thickness of the films. The thermo-electro motive force of the prepared films was found to increase with an increase in the substrate temperature up to 423 K and then decrease at 473 K due to the presence of mixed-phase structure. The maximum thermoelectric power of 220 ?V/K was observed for the films deposited at 423 K substrate temperature, which was found to decrease with increase in thickness. The films deposited at 423 K with 150 nm thickness showed maximum power factor of 27 ?Wm?1K?2 at 450 K. These observations are explained on the basis of structural, morphological and compositional changes. 2017 Elsevier B.V. | en_US |
dc.identifier.citation | Journal of Alloys and Compounds, 2017, Vol.715, , pp.224-229 | en_US |
dc.identifier.uri | https://idr.nitk.ac.in/handle/123456789/10866 | |
dc.title | Effect of substrate temperature and film thickness on the thermoelectric properties of In2Te3 thin films | en_US |
dc.type | Article | en_US |