Effect of annealing on the properties of Bi doped ZnO thin films grown by spray pyrolysis technique

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dc.contributor.authorSadananda Kumar, N.
dc.contributor.authorBangera, K.V.
dc.contributor.authorShivakumar, G.K.
dc.date.accessioned2026-02-05T09:34:22Z
dc.date.issued2014
dc.description.abstractThe effect of annealing temperature on the structural, optical and electrical properties of transparent and conducting Bi doped ZnO (BZO) films deposited on glass substrate by spray pyrolysis technique was investigated. The BZO thin films were annealed in the temperature range from 450 °C to 550°C for 4 h in air atmosphere. The grain size of the BZO films increased with increasing annealing temperature. The annealed BZO films were electrically stable and there was a drastic change in the electrical conductivity after annealing. The films annealed at 500°C showed better conductivity and optical transmittance. © 2014 Elsevier Ltd. All rights reserved.
dc.identifier.citationSuperlattices and Microstructures, 2014, 75, , pp. 303-310
dc.identifier.issn7496036
dc.identifier.urihttps://doi.org/10.1016/j.spmi.2014.07.019
dc.identifier.urihttps://idr.nitk.ac.in/handle/123456789/26580
dc.publisherAcademic Press
dc.subjectConductive films
dc.subjectElectric conductivity
dc.subjectOptical properties
dc.subjectSemiconductor doping
dc.subjectSpray pyrolysis
dc.subjectSubstrates
dc.subjectZinc oxide
dc.subjectAnnealing temperatures
dc.subjectBismuth doping
dc.subjectEffect of annealing
dc.subjectElectrical conductivity
dc.subjectGlass substrates
dc.subjectOptical and electrical properties
dc.subjectSpray-pyrolysis techniques
dc.subjectTemperature range
dc.subjectBi-doped
dc.subjectAnnealing
dc.titleEffect of annealing on the properties of Bi doped ZnO thin films grown by spray pyrolysis technique

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