High Sensitivity Refractive Index Sensor Based on Indium Antimonide Terahertz Plasmonic Ring Resonator
No Thumbnail Available
Date
2022
Authors
Journal Title
Journal ISSN
Volume Title
Publisher
Institute of Electrical and Electronics Engineers Inc.
Abstract
A high sensitivity refractive index semiconductor-insulator-semiconductor (SIS) waveguide with a ring resonator sensor at THz frequency is proposed. The topological study of the proposed filter is numerically simulated using the finite element method. A maximum sensitivity of 0.509 THz/ Refractive index unit (RIU) is obtained by filling the air-filled ring resonator cavity with different refractive index materials. Besides that, the transmission characteristics are studied by varying the structural dimensions and observed that the system can be treated as a frequency selective device. The device gets modified by incorporating another concentric ring inside the single ring. From the transmission characteristics, the multiple modes of the concentric dual ring are studied, and concluded that the even TM1 mode shows a better response towards frequency tuning. © 2001-2012 IEEE.
Description
Keywords
Finite element method, III-V semiconductors, Indium phosphide, Natural frequencies, Optical resonators, Optical waveguides, Plasmonics, Refractometers, Ring gages, Semiconducting indium, Semiconducting indium gallium arsenide, Semiconducting indium phosphide, Concentric dual ring, Dual-ring, Electromagnetic waveguides, High sensitivity, Refractive index sensor, Ring resonator, Semiconductor-insulator-semiconductor, Sensitivity, Terahertz frequencies, Transmission characteristics, Refractive index
Citation
IEEE Sensors Journal, 2022, 22, 16, pp. 15916-15922