Investigation of hole transport in ?-NPD using impedance spectroscopy with F4TCNQ as hole-injection layer
No Thumbnail Available
Date
2015
Authors
Fernandes, J.M.
Kiran, M.R.
Ulla, H.
Satyanarayan, M.N.
Umesh, G.
Journal Title
Journal ISSN
Volume Title
Publisher
Abstract
The charge carrier transport is studied in N,N?-di(1-naphthyl)-N,N?-diphenyl-(1,1?-biphenyl)-4,4?-diamine (?-NPD) with the incorporation of sequentially doped p-type dopant 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) as hole-injection layer in hole-only device structures. The field dependent mobility of the charge carriers is determined using frequency dependent capacitance, conductance and impedance methods by varying the thickness of ?-NPD. The Poole-Frenkel zero-field mobility and the Poole-Frenkel coefficient thus obtained for each device in all the three methods is found to be almost constant. 2015 Elsevier Ltd. All rights reserved.
Description
Keywords
Citation
Superlattices and Microstructures, 2015, Vol.83, , pp.766-775