Studies on vacuum deposited p-ZnTe/n-ZnSe heterojunction diodes

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dc.contributor.authorRao, K.G.
dc.contributor.authorBangera, K.V.
dc.contributor.authorShivakumar, G.K.
dc.date.accessioned2026-02-05T09:36:15Z
dc.date.issued2010
dc.description.abstractp-ZnTe/n-ZnSe heterojunction diodes were prepared by vacuum deposition and a detailed electrical characterization of the heterojunction was performed. The I-V and C-V characteristics of the heterojunction diodes were studied to determine the conduction mechanism, barrier height, space charge density and thickness of the depletion region in the heterojunction. The bandgap and activation energies of n-ZnSe and p-ZnTe were also determined and a theoretical band diagram of p-ZnTe/n-ZnSe heterojunction was drawn based on Anderson's model. © 2010 Elsevier Ltd. All rights reserved.
dc.identifier.citationSolid-State Electronics, 2010, 54, 8, pp. 787-790
dc.identifier.issn381101
dc.identifier.urihttps://doi.org/10.1016/j.sse.2010.03.013
dc.identifier.urihttps://idr.nitk.ac.in/handle/123456789/27432
dc.subjectAndersons
dc.subjectBand diagrams
dc.subjectBand gaps
dc.subjectBarrier heights
dc.subjectC-V characterization
dc.subjectConduction Mechanism
dc.subjectDepletion region
dc.subjectElectrical characterization
dc.subjectHeterojunction diodes
dc.subjectI-V and C-V characteristics
dc.subjectIV characterization
dc.subjectp-ZnTe/n-ZnSe heterojunction
dc.subjectSpace charge density
dc.subjectActivation energy
dc.subjectSemiconductor diodes
dc.subjectVacuum
dc.subjectVacuum deposition
dc.subjectZinc compounds
dc.subjectHeterojunctions
dc.titleStudies on vacuum deposited p-ZnTe/n-ZnSe heterojunction diodes

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