Ultra-broadband fabrication-tolerant mode division (de)multiplexer on thin film Lithium niobate

Simple item page
dc.contributor.authorKaushalram, A.
dc.contributor.authorT.r, Y.
dc.contributor.authorDas, P.P.
dc.contributor.authorHegde, G.
dc.contributor.authorSrinivas, S.
dc.date.accessioned2026-02-05T09:27:58Z
dc.date.issued2020
dc.description.abstractMode division (de) multiplexers based on asymmetric directional coupler are designed and analysed on the emerging thin film lithium niobate platform in rib, buried and strip waveguide configurations. Rib configuration offers a large bandwidth of ?215 nm with a crosstalk level lower than ?10 dB, and provides a large fabrication tolerance of ±50 nm. Strip configuration exhibits a better crosstalk of ?19.7 dB at the design wavelength of 1550 nm, and has a reasonable fabrication tolerance of ±30 nm. Performance of (de) multiplexers on all three waveguide configurations are analysed in terms of modal crosstalk, mode conversion efficiency, bandwidth, along with fabrication tolerance to width and sidewall angle. The influence of electro-optic effect on the coupling length of lithium niobate mode multiplexers is also investigated. © 2020 Elsevier B.V.
dc.identifier.citationOptics Communications, 2020, 475, , pp. -
dc.identifier.issn304018
dc.identifier.urihttps://doi.org/10.1016/j.optcom.2020.126251
dc.identifier.urihttps://idr.nitk.ac.in/handle/123456789/23615
dc.publisherElsevier B.V.
dc.subjectBandwidth
dc.subjectCrosstalk
dc.subjectLithium
dc.subjectMultiplexing equipment
dc.subjectNiobium compounds
dc.subjectThin films
dc.subjectWaveguides
dc.subjectCross-talk levels
dc.subjectDesign wavelength
dc.subjectElectrooptic effects
dc.subjectFabrication tolerances
dc.subjectLithium niobate
dc.subjectSidewall angles
dc.subjectStrip waveguides
dc.subjectWaveguide configurations
dc.subjectFabrication
dc.titleUltra-broadband fabrication-tolerant mode division (de)multiplexer on thin film Lithium niobate

Files

Collections

Journal Articles