Investigation of hole-injection in ?-NPD using capacitance and impedance spectroscopy techniques with F4TCNQ as hole-injection layer: Initial studies

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dc.contributor.authorFernandes, J.M.
dc.contributor.authorRaveendra Kiran, M.R.
dc.contributor.authorUlla, H.
dc.contributor.authorSatyanarayan, M.N.
dc.contributor.authorUmesh, G.
dc.date.accessioned2026-02-05T09:34:21Z
dc.date.issued2014
dc.description.abstractThe charge accumulation leading to injection at the organic interface in the sequentially doped hole-only device structure is studied using capacitance and impedance based spectroscopic techniques. In this paper, we investigate the role of p-type dopant 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F<inf>4</inf>TCNQ) in the charge transport properties of N,N'-Di(1-naphthyl)-N,N'-diphenyl-(1,1?-biphenyl)-4,4?-diamine (?-NPD) through sequential deposition. We show that the hole injection into ?-NPD increases with the increase of interlayer (F<inf>4</inf>TCNQ) thickness by correlating the current density-voltage, capacitance-voltage, capacitance-frequency and impedance measurements. © 2014 Elsevier Ltd. All rights reserved.
dc.identifier.citationSuperlattices and Microstructures, 2014, 76, , pp. 385-393
dc.identifier.issn7496036
dc.identifier.urihttps://doi.org/10.1016/j.spmi.2014.10.026
dc.identifier.urihttps://idr.nitk.ac.in/handle/123456789/26573
dc.publisherAcademic Press
dc.subjectCharge injection
dc.subjectDoping (additives)
dc.subjectElectric impedance
dc.subjectProduct development
dc.subjectCapacitance voltage
dc.subjectCharge accumulation
dc.subjectHole-injection layers
dc.subjectImpedance measurement
dc.subjectImpedance spectroscopy
dc.subjectOrganic interfaces
dc.subjectSequential deposition
dc.subjectSpectroscopic technique
dc.subjectCapacitance
dc.titleInvestigation of hole-injection in ?-NPD using capacitance and impedance spectroscopy techniques with F4TCNQ as hole-injection layer: Initial studies

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