Electrical switching behavior of bulk Si15Te85-xSbx chalcogenide glasses - A study of compositional dependence
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2010
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Abstract
Studies on the electrical switching behavior of melt quenched bulk Si<inf>15</inf>Te<inf>85-x</inf>Sb<inf>x</inf> glasses have been undertaken in the composition range (1 ? x ? 10), in order to understand the effect of Sb addition on the electrical switching behavior of Si<inf>15</inf>Te<inf>85-x</inf> base glass. It has been observed that all the Si<inf>15</inf>Te<inf>85-x</inf>Sb<inf>x</inf> glasses studied exhibit a smooth memory type switching. Further, the switching voltages are found to decrease almost linearly with Sb content, which indicates that the metallicity of the dopant plays a dominant role in this system compared to network connectivity/rigidity. The thickness dependence of switching voltage (V<inf>th</inf>) indicates a clear thermal origin for the switching mechanism. The temperature variation of switching voltages reveals that the Si<inf>15</inf>Te<inf>85-x</inf>Sb<inf>x</inf> glasses studied have a moderate thermal stability. © 2009 Elsevier B.V. All rights reserved.
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Chalcogenide glass, Composition ranges, Compositional dependence, Electrical switching, High field, High field effects, Metallicities, Switching mechanism, Switching voltages, Temperature variation, Thermal origins, Thermal stability, Thickness dependence, Chalcogenides, Glass, Phase change memory, Silicon, Tellurium compounds, Switching
Citation
Journal of Non-Crystalline Solids, 2010, 356, 46240, pp. 321-325