Spintronics Main Memory Alternative to DRAM with Reliable Simulations

dc.contributor.authorKallinatha, H.D.
dc.contributor.authorTalawar, B.
dc.date.accessioned2026-02-06T06:34:28Z
dc.date.issued2023
dc.description.abstractThis study introduces a new approach to integrate SOT-MRAM into hybrid and full main memory architectures in a multi-core system. The study overcomes the challenge of limited publicly available SOT-MRAM parameters for reliable simulation. In this work, we conducted micro-architectural design space exploration and full system simulations to highlight the potential of SOT-MRAM. The study shows that SOT-MRAM offers remarkable power reduction, bandwidth increase, and a reduction in Energy-Delay Product (EDP) with minimal latency impact. Even with scaled current and timing parameters, SOTMRAM outperforms DRAM. This approach has opened up new possibilities for energy-efficient memory systems that could significantly improve the performance of multi-core systems. © 2023 IEEE.
dc.identifier.citationProceedings - 2023 IEEE 30th International Conference on High Performance Computing, Data, and Analytics Workshops, HiPCW 2023, 2023, Vol., , p. 79-
dc.identifier.urihttps://doi.org/
dc.identifier.urihttps://idr.nitk.ac.in/handle/123456789/29256
dc.publisherInstitute of Electrical and Electronics Engineers Inc.
dc.subjectHybrid Memories
dc.subjectNon-volatile Memories(NVM)
dc.subjectSOT-MRAM
dc.subjectSTT-MRAM
dc.titleSpintronics Main Memory Alternative to DRAM with Reliable Simulations

Files