Spintronics Main Memory Alternative to DRAM with Reliable Simulations
| dc.contributor.author | Kallinatha, H.D. | |
| dc.contributor.author | Talawar, B. | |
| dc.date.accessioned | 2026-02-06T06:34:28Z | |
| dc.date.issued | 2023 | |
| dc.description.abstract | This study introduces a new approach to integrate SOT-MRAM into hybrid and full main memory architectures in a multi-core system. The study overcomes the challenge of limited publicly available SOT-MRAM parameters for reliable simulation. In this work, we conducted micro-architectural design space exploration and full system simulations to highlight the potential of SOT-MRAM. The study shows that SOT-MRAM offers remarkable power reduction, bandwidth increase, and a reduction in Energy-Delay Product (EDP) with minimal latency impact. Even with scaled current and timing parameters, SOTMRAM outperforms DRAM. This approach has opened up new possibilities for energy-efficient memory systems that could significantly improve the performance of multi-core systems. © 2023 IEEE. | |
| dc.identifier.citation | Proceedings - 2023 IEEE 30th International Conference on High Performance Computing, Data, and Analytics Workshops, HiPCW 2023, 2023, Vol., , p. 79- | |
| dc.identifier.uri | https://doi.org/ | |
| dc.identifier.uri | https://idr.nitk.ac.in/handle/123456789/29256 | |
| dc.publisher | Institute of Electrical and Electronics Engineers Inc. | |
| dc.subject | Hybrid Memories | |
| dc.subject | Non-volatile Memories(NVM) | |
| dc.subject | SOT-MRAM | |
| dc.subject | STT-MRAM | |
| dc.title | Spintronics Main Memory Alternative to DRAM with Reliable Simulations |
