A comparative study on enhancer and inhibitor of glycine–nitrate combustion ZnO screen-printed sensor: detection of low concentration ammonia at room temperature
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Date
2020
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Springer
Abstract
We report a comparative study on enhancing and inhibiting the sensing performance of Sr-doped ZnO (Sr<inf>0.01</inf> Zn<inf>0.99</inf>O) and RuO<inf>2</inf>-activated Sr-doped ZnO heterostructured sensors towards the low concentration (? 50 ppm) of ammonia gas at ambient. Sub-microns sized with high specific surface area, high reactive, oxygen-deficient Sr-doped ZnO particles were synthesized at low temperature (196 °C) through facile glycine–nitrate solution combustion synthesis (SCS) method. Porous, adhered screen-printed film of Sr-doped ZnO with optical bandgap (3.22 eV) was dip-coated using 0.02 M RuCl<inf>3</inf> aqueous solution to obtain RuO<inf>2</inf> activation. Smaller crystallite size and lesser lattice distortion obtained with Sr-doping in ZnO enhance the gas response (S = 71) towards the 50 ppm of ammonia gas at room temperature. RuO<inf>2</inf>-activated Sr-doped ZnO sensor associated with lesser oxygen vacancies and a lower concentration of chemisorbed oxygen species due to passivation layer and no-spill-over activity of RuO<inf>2</inf>, which inhibits the gas response from 71 to 3. Sr-doped ZnO-based sensor shows high selectivity towards ammonia against 50 ppm of volatile organic compound (VOCs) vapor. Expeditious sensor kinetics (response time and recovery time) in the Sr-doped ZnO sensor was observed, in which smaller crystallite size offers a shorter distance for the diffusion of oxygen vacancies (V<inf>o</inf>). Ultra-high-sensitive and selective sensors with ease and economical fabrication offer feasibility in industries and domestic applications where detection of the less concentration ammonia vapor is crucial. © 2020, Springer Science+Business Media, LLC, part of Springer Nature.
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Keywords
Amino acids, Ammonia, Chlorine compounds, Combustion synthesis, Crystallite size, II-VI semiconductors, Nitrates, Oxygen vacancies, Passivation, Ruthenium compounds, Semiconductor doping, Temperature, Volatile organic compounds, Zinc oxide, Chemisorbed oxygen, Comparative studies, Diffusion of oxygens, Economical fabrication, High specific surface area, Lattice distortions, Low concentrations, Sensing performance, Strontium compounds
Citation
Journal of Materials Science: Materials in Electronics, 2020, 31, 13, pp. 10366-10380
