Design and development of SiGe HBT based high gain amplifier for GPS application

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dc.contributor.authorSoni, B.K.
dc.contributor.authorRamasubramanian, R.
dc.contributor.authorSancheti, S.
dc.date.accessioned2020-03-30T10:02:34Z
dc.date.available2020-03-30T10:02:34Z
dc.date.issued2008
dc.description.abstractA two stage high gain small signal amplifier for GPS based receiver application is designed and realised using SiGe Hetrojunction Bipolar transistor (HBT). The measured gain and noise figure is 33.5 dB and 2.9dB respectively at Vce of 2 V, and total current of 10mA. The circuit is fabricated on microstrip configuration using RT duroid substrate of dielectric constant 10.5 and height 50 mils. This circuit is being used in satellite based GPS receiver. � 2008 IEEE.en_US
dc.identifier.citation2008 International Conference of Recent Advances in Microwave Theory and Applications, MICROWAVE 2008, 2008, Vol., , pp.543-545en_US
dc.identifier.urihttps://idr.nitk.ac.in/handle/123456789/7634
dc.titleDesign and development of SiGe HBT based high gain amplifier for GPS applicationen_US
dc.typeBook chapteren_US

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