Fabrication and characterization of thermal evaporated n-Si/ p-ZnTe thin film heterojunction diodes
| dc.contributor.author | Rao, G.K. | |
| dc.contributor.author | Bangera, K.V. | |
| dc.contributor.author | Shivakumar, G.K. | |
| dc.date.accessioned | 2020-03-31T08:30:59Z | |
| dc.date.available | 2020-03-31T08:30:59Z | |
| dc.date.issued | 2013 | |
| dc.description.abstract | The paper reports the fabrication and detailed electrical characterization of thermal evaporated n-Si/p-ZnTe thin film heterojunction diodes. The heterojunction diodes were prepared by depositing ZnTe films on n-Si substrates. The conduction mechanism, barrier height, space charge density and width of the depletion region were determined by I-V and C-V characteristics of the heterojunction diodes. The bandgap and activation energies of n-Si and p-ZnTe were also determined and a theoretical band diagram of n-Si/p-ZnTe heterojunction was drawn based on Anderson's model. 2012 Elsevier B.V. All rights reserved. | en_US |
| dc.identifier.citation | Current Applied Physics, 2013, Vol.13, 1, pp.298-301 | en_US |
| dc.identifier.uri | https://idr.nitk.ac.in/handle/123456789/11247 | |
| dc.title | Fabrication and characterization of thermal evaporated n-Si/ p-ZnTe thin film heterojunction diodes | en_US |
| dc.type | Article | en_US |