A High-Sensitive High-Input Impedance CMOS Front-End Amplifier for Neural Spike Detection

dc.contributor.authorNaik, J.D.
dc.contributor.authorGorre, P.
dc.contributor.authorAl-Shidaifat, A.D.
dc.contributor.authorKumar, S.
dc.contributor.authorSong, H.
dc.date.accessioned2026-02-06T06:35:07Z
dc.date.issued2023
dc.description.abstractNeural spikes detection and monitoring for neuro-prosthetic applications require an efficient and robust front-end amplifier (FEA), which regulates the fidelity of the neural signal. This paper presents neutralization and bootstrapping techniques to overcome the input leakage currents produced by amplifiers of the input bias network. In addition, a pseudo-resistor technique ensures the FEA maintains a high-input impedance. The CMOS-based FEA architecture is executed in the advanced design system with the design kit of the CMOS process. The proposed design achieves a high-input impedance of 0.5 TΩ with a maximum simulation gain of 66.2 dB. The overall power consumption of the topology is observed as 2.6 µW with a power supply voltage of 0.9 V. The simulated noise performance of 6 nV/√Hz at 1 kHz demonstrates a high-sensitive design compared to the previous works. It is highly recommended for succeeding neuro-prosthetic applications. © 2023, The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd.
dc.identifier.citationLecture Notes in Networks and Systems, 2023, Vol.554, , p. 487-496
dc.identifier.issn23673370
dc.identifier.urihttps://doi.org/10.1007/978-981-19-6661-3_44
dc.identifier.urihttps://idr.nitk.ac.in/handle/123456789/29655
dc.publisherSpringer Science and Business Media Deutschland GmbH
dc.subjectBootstrapping
dc.subjectCMOS technology
dc.subjectFront-end amplifier
dc.subjectNeuro-prosthetic
dc.subjectPseudo-resistor
dc.titleA High-Sensitive High-Input Impedance CMOS Front-End Amplifier for Neural Spike Detection

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