Unintentionally doped homoepitaxial InSb films have been grown by liquid phase epitaxy employing ramp cooling and step cooling growth modes. The effect of growth temperature, degree of supercooling and growth duration on the surface morphology and crystallinity were investigated. The major surface features of the grown film like terracing, inclusions, meniscus lines, etc are presented step-by-step and a variety of methods devised to overcome such undesirable features are described in sufficient detail. The optimization of growth parameters have led to the growth of smooth and continuous films. From the detailed morphological, X-ray diffraction, scanning electron microscopic and Raman studies, a correlation between the surface morphology and crystallinity has been established.

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dc.contributor.authorUdayashankar, N.K.
dc.contributor.authorBhat, H.L.
dc.date.accessioned2026-02-05T11:00:30Z
dc.date.issuedInfluence of growth parameters on the surface morphology and crystallinity of InSb epilayers grown by liquid phase epitaxy
dc.description.abstract2003
dc.identifier.citationBulletin of Materials Science, 2003, 26, 7, pp. 685-692
dc.identifier.issn2504707
dc.identifier.urihttps://doi.org/10.1007/BF02706764
dc.identifier.urihttps://idr.nitk.ac.in/handle/123456789/27987
dc.publisherIndian Academy of Sciences
dc.subjectCooling
dc.subjectCrystal growth
dc.subjectCrystallization
dc.subjectDoping (additives)
dc.subjectLiquid phase epitaxy
dc.subjectOptimization
dc.subjectRaman scattering
dc.subjectScanning electron microscopy
dc.subjectSurfaces
dc.subjectX ray diffraction
dc.subjectGrowth duration
dc.subjectGrowth parameters
dc.subjectRamp cooling
dc.subjectSemiconducting indium compounds
dc.titleUnintentionally doped homoepitaxial InSb films have been grown by liquid phase epitaxy employing ramp cooling and step cooling growth modes. The effect of growth temperature, degree of supercooling and growth duration on the surface morphology and crystallinity were investigated. The major surface features of the grown film like terracing, inclusions, meniscus lines, etc are presented step-by-step and a variety of methods devised to overcome such undesirable features are described in sufficient detail. The optimization of growth parameters have led to the growth of smooth and continuous films. From the detailed morphological, X-ray diffraction, scanning electron microscopic and Raman studies, a correlation between the surface morphology and crystallinity has been established.

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