Effects of annealing temperature on the resistance switching behaviour of solution-processed ZnO thin films

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dc.contributor.authorRaveendra Kiran, M.
dc.contributor.authorUlla, H.
dc.contributor.authorSatyanarayan, M.N.
dc.contributor.authorUmesh, G.
dc.date.accessioned2026-02-05T09:27:48Z
dc.date.issued2020
dc.description.abstractIn this study, the resistance switching (RS) behaviour of the fabricated devices with the configuration: ITO/ZnO (x annealing temperature)/Al were investigated. It was observed that the area of a hysteresis loop in the Current-Voltage characteristics was reduced with increase in ZnO annealing temperature. Correspondingly, the on/off ratio of the RS also gets reduced. The hysteresis behaviour was highly consistent and repeatable for the films annealed at 150 °C. The films annealed at 450 °C did not show any RS behaviour. Under the high current condition, a reproducible RS behaviour was observed. This was attributed to the synergetic effects of lowering of the barrier height at electrode/ZnO interface and the increase in the grain size with the annealing temperatures. The RS behaviour is ascribed to the conduction mechanism at the ITO/ZnO interface. © 2020 Elsevier Ltd
dc.identifier.citationSuperlattices and Microstructures, 2020, 148, , pp. -
dc.identifier.issn7496036
dc.identifier.urihttps://doi.org/10.1016/j.spmi.2020.106718
dc.identifier.urihttps://idr.nitk.ac.in/handle/123456789/23559
dc.publisherAcademic Press
dc.subjectCurrent voltage characteristics
dc.subjectHysteresis
dc.subjectII-VI semiconductors
dc.subjectOxide minerals
dc.subjectSwitching
dc.subjectThin films
dc.subjectZinc oxide
dc.subjectAnnealing temperatures
dc.subjectBarrier heights
dc.subjectConduction Mechanism
dc.subjectFabricated device
dc.subjectHysteresis behaviour
dc.subjectResistance switching
dc.subjectSolution-processed
dc.subjectSynergetic effect
dc.subjectAnnealing
dc.titleEffects of annealing temperature on the resistance switching behaviour of solution-processed ZnO thin films

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