Highly conducting and transparent Ga2O3 doped ZnO thin films prepared by thermal evaporation method

dc.contributor.author	Palimar, S.
dc.contributor.author	Bangera, K.V.
dc.contributor.author	Shivakumar, G.K.
dc.date.accessioned	2020-03-31T08:35:49Z
dc.date.available	2020-03-31T08:35:49Z
dc.date.issued	2012
dc.description.abstract	Amorphous zinc oxide thin films are obtained by thermally evaporating pure zinc oxide powder. Films obtained have an excellent conductivity of 90 ?-1 cm-1 with transparency of up to 90% in the visible region. On doping with gallium oxide a great improvement in the conductivity of up to 8. 7 103 ?-1 cm-1 is observed and the optical band gap of the films is decreased from 3. 25 to 3. 2 eV, retaining the transparency. Measurements of activation energy show that the doped ZnO film has one donor level at 68 meV and other at 26 meV bellow the conduction band. 2012 Pleiades Publishing, Ltd.	en_US
dc.identifier.citation	Semiconductors, 2012, Vol.46, 12, pp.1545-1548	en_US
dc.identifier.uri	https://idr.nitk.ac.in/handle/123456789/11890
dc.title	Highly conducting and transparent Ga2O3 doped ZnO thin films prepared by thermal evaporation method	en_US
dc.type	Article	en_US

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