A comprehensive study on effect of annealing on structural, morphological and optical properties of CdO and photodetection of heterojunction n-CdO/p-Si diode

Simple item page
dc.contributor.authorPoul Raj, I.L.P.
dc.contributor.authorChidhambaram, N.
dc.contributor.authorSaravanakumar, S.
dc.contributor.authorSasikumar, S.
dc.contributor.authorVaradharajaperumal, S.
dc.contributor.authorAlagarasan, D.
dc.contributor.authorAlshahrani, T.
dc.contributor.authorShkir, M.
dc.contributor.authorAlFaify, S.
dc.date.accessioned2026-02-05T09:26:52Z
dc.date.issued2021
dc.description.abstractThe present investigation reports the synthesis of CdO using the facile sol-gel technique. The CdO samples exhibit cubic structure and their crystalline quality increases with different sintering temperatures (550, 650, and 750 °C). The maximum entropy method (MEM) was applied to calculate the charge density distribution of the CdO samples and the two-dimensional charge density maps showed a slight enlargement in the cell volume of the CdO with sintering temperatures. The bandgap of the CdO samples varied from 2.89 to 2.66 eV with increasing sintering temperature. Heterojunction n-CdO/p-Si photodiodes were constructed (using CdO samples) on silicon wafers using the spin coating procedure. The ideality factor of the diodes is found to decrease from 5.2 to 4.2 with sintering temperatures of the CdO. The heterojunction diode constructed using the CdO sample sintered at 750 °C exhibited the highest responsivity and external quantum efficiency values of 0.34 A/W and 109 %, respectively. Improved crystallinity, responsivity, and quantum efficiency make the developed CdO device useful for optoelectronics. © 2021 Elsevier GmbH
dc.identifier.citationOptik, 2021, 241, , pp. -
dc.identifier.issn304026
dc.identifier.urihttps://doi.org/10.1016/j.ijleo.2021.166406
dc.identifier.urihttps://idr.nitk.ac.in/handle/123456789/23111
dc.publisherElsevier GmbH
dc.subjectCadmium compounds
dc.subjectCrystallinity
dc.subjectHeterojunctions
dc.subjectMaximum entropy methods
dc.subjectPhotodiodes
dc.subjectPolycrystalline materials
dc.subjectQuantum efficiency
dc.subjectSemiconductor doping
dc.subjectSilicon compounds
dc.subjectCubic structure
dc.subjectEffect of annealing
dc.subjectExternal quantum efficiency
dc.subjectMaximum-entropy methods
dc.subjectN-CdO/p-si photodiode
dc.subjectPhoto detection
dc.subjectResponsivity
dc.subjectSi photodiodes
dc.subjectSintering temperatures
dc.subjectSol-gel technique
dc.subjectRietveld refinement
dc.titleA comprehensive study on effect of annealing on structural, morphological and optical properties of CdO and photodetection of heterojunction n-CdO/p-Si diode

Files

Collections

Journal Articles