Boronic Acid-Based n-Type Semiconductor for Electronic Device Application
| dc.contributor.author | Kagatikar, S. | |
| dc.contributor.author | Dhanya, D. | |
| dc.contributor.author | Kekuda, D. | |
| dc.contributor.author | Satyanarayana, M.N. | |
| dc.contributor.author | Kulkarni, S.D. | |
| dc.contributor.author | Karkera, C. | |
| dc.date.accessioned | 2026-02-04T12:27:32Z | |
| dc.date.issued | 2022 | |
| dc.description.abstract | Electron transporting, or n-type, semiconductors can serve as charge-transport materials, and are ideal for use in organic electronic devices. Boron-based small organic molecules have garnered immense research attention as the heteroatom can effectively alter the electronic structures leading to excellent photophysical and electrochemical properties. A luminescent Schiff base (E)-(4-((2-(2-hydroxybenzoyl)hydrazono)methyl)phenyl)boronic acid (SHB) was prepared by a one-pot condensation reaction between salicyloyl hydrazide and formylphenylboronic acid. The synthesized molecule was chemically characterized by infrared spectroscopy, nuclear magnetic resonance spectroscopy, and mass spectrometry. The blue-emitting boronic acid-derived molecule displayed intramolecular charge transfer, high carrier concentration, good thermal stability, a reversible reduction tendency and formation of uniform amorphous thin films. A diode was successfully fabricated via a solution processing technique with an ideality factor of 7.76. Further, AC conductivity, dielectric constant, dielectric loss, and capacitance values in a frequency range of 10–1000 Hz were extracted from dielectric studies. The dielectric constant of SHB was found to be 9.71 with an AC conductivity of 6.34 × 10−9 Ω−1 cm−1 at 1000 Hz. Graphical Abstract: [Figure not available: see fulltext.] © 2022, The Author(s). | |
| dc.identifier.citation | Journal of Electronic Materials, 2022, 51, 11, pp. 6180-6187 | |
| dc.identifier.issn | 3615235 | |
| dc.identifier.uri | https://doi.org/10.1007/s11664-022-09864-5 | |
| dc.identifier.uri | https://idr.nitk.ac.in/handle/123456789/22341 | |
| dc.publisher | Springer | |
| dc.subject | Carrier concentration | |
| dc.subject | Charge transfer | |
| dc.subject | Condensation reactions | |
| dc.subject | Dielectric losses | |
| dc.subject | Electronic structure | |
| dc.subject | Infrared spectroscopy | |
| dc.subject | Mass spectrometry | |
| dc.subject | Molecules | |
| dc.subject | Synthesis (chemical) | |
| dc.subject | Thermoelectric equipment | |
| dc.subject | A.C conductivity | |
| dc.subject | Boronic acid | |
| dc.subject | Boronic acid-based schiff base | |
| dc.subject | Device application | |
| dc.subject | Electron-transporting | |
| dc.subject | Electronics devices | |
| dc.subject | N-type semiconductors | |
| dc.subject | Organic electronics | |
| dc.subject | Schiff-base | |
| dc.subject | Solution-processing | |
| dc.subject | Nuclear magnetic resonance spectroscopy | |
| dc.title | Boronic Acid-Based n-Type Semiconductor for Electronic Device Application |
