Multistate nonpolar resistive switching in nickel embedded polyoxovanadate for high density data storage

Abstract

The evolution of the electronic industry constantly relies on downscaling of electronic devices and integrating novel materials in active regions to accomplish ever-higher speeds and new features in device structures. Employing materials that display multistate switching for resistive-random-access-memory or simply resistive memory could be a simple and effective way to realize high density data storage. In this context, we report multistate “nonpolar” resistive switching in a nickel embedded polyoxovanadate cluster, (K<inf>2</inf>H<inf>5</inf>[NiV<inf>14</inf>O<inf>40</inf>]) – a molecule that belongs to the larger polyoxometalate family. We observed unique and distinctive nonpolar resistive switching behaviour for the first time in a multi-redox polyoxometalate cluster. The switching characteristics were repeatable for more than 200 cycles. Our two terminal Al/K<inf>2</inf>H<inf>5</inf>[NiV<inf>14</inf>O<inf>40</inf>])/ITO memory cells exhibited considerably high resistance window (105) and also long retention time (2000 s). This work holds promise for a novel strategy in order to achieve multilevel storage by exploiting different varieties of polyoxometalate molecules as active switching element that can possibly connect memory with neuromorphic computing. © 2024 Elsevier B.V.