solated Bidirectional DC-DO Converters to Integrate PVwith Energy Storage Systems for High Power Density Applications
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Date
2023
Authors
Bathala, Kiran
Journal Title
Journal ISSN
Volume Title
Publisher
National Institute Of Technology Karnataka Surathkal
Abstract
An isolated bidirectional DC-DC converter is a solution to integrate
renewable energy-generating units with energy storage systems. This
concept can overcome the drawback of intermittency or non-availability
of renewable energy sources throughout the day, e.g., solar energy, by
supplying the energy to loads through battery storage units. This
research is to find a suitable isolated bidirectional dual active bridge
(DAB) resonant DC-DC converter for high power density applications
and investigate its performance. Therefore, in this work, the literature
survey on isolated bidirectional dual active bridge converter topologies,
their switching and power control schemes, and analysis methods are
presented.
Single phase-shift control technique a fixed-frequency control scheme
makes the design of isolation transformer, inductive and capacitive filters
easy for better filtering. The modeling, steady-state analysis and design
of the converter have been presented. The detailed performance analysis
of the proposed converter during various intervals of operation for both
forward and reverse mode operation is presented. It has been found
that the use of a single phase-shift control scheme, leads to continuous
conduction mode operation of the converter without loss of duty cycle.
This switching scheme successfully maintains constant output voltage
with a small change in pulse width for wide variations in input voltage
and load conditions. A 135 W, 48V converter has been proposed
and its performance has been studied through theoretical calculations,
simulations and experiment in the laboratory.
The boundary condition of the soft-switching of the converter is studied
by establishing an expression for instantaneous switch current and dead
time in terms of the parasitic capacitance of the switching device i.e.,
MOSFET.