Fabrication and characterization of ZnO/AI/ZnO multilayers by simultaneous DC and RF magnetron sputtering

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dc.contributor.authorNagaraja, K.K.
dc.contributor.authorKumar, A.S.
dc.contributor.authorNagaraja, H.S.
dc.date.accessioned2020-03-30T10:18:01Z
dc.date.available2020-03-30T10:18:01Z
dc.date.issued2015
dc.description.abstractThe present investigation reports the fabrication and characterization of multilayered transparent electrodes by simultaneous DC and RF magnetron sputtering on glass substrates. The multilayer structure consists of three layers (ZnO/Al/ZnO). The influence of Al layer thickness on the electrical and optical properties was investigated. Optimum thickness of Al was determined for high transmittance and good electrical conductivity. High quality films having resistance as low as 25 ?/sq with optical transmittance upto 65% were obtained at room temperature. � Published under licence by IOP Publishing Ltd.en_US
dc.identifier.citationIOP Conference Series: Materials Science and Engineering, 2015, Vol.73, 1, pp.-en_US
dc.identifier.urihttps://idr.nitk.ac.in/handle/123456789/8037
dc.titleFabrication and characterization of ZnO/AI/ZnO multilayers by simultaneous DC and RF magnetron sputteringen_US
dc.typeBook chapteren_US

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