Studies on vacuum deposited p-ZnTe/n-ZnSe heterojunction diodes
| dc.contributor.author | Rao, G.K. | |
| dc.contributor.author | Bangera, K.V. | |
| dc.contributor.author | Shivakumar, G.K. | |
| dc.date.accessioned | 2020-03-31T08:45:16Z | |
| dc.date.available | 2020-03-31T08:45:16Z | |
| dc.date.issued | 2010 | |
| dc.description.abstract | p-ZnTe/n-ZnSe heterojunction diodes were prepared by vacuum deposition and a detailed electrical characterization of the heterojunction was performed. The I-V and C-V characteristics of the heterojunction diodes were studied to determine the conduction mechanism, barrier height, space charge density and thickness of the depletion region in the heterojunction. The bandgap and activation energies of n-ZnSe and p-ZnTe were also determined and a theoretical band diagram of p-ZnTe/n-ZnSe heterojunction was drawn based on Anderson's model. 2010 Elsevier Ltd. All rights reserved. | en_US |
| dc.identifier.citation | Solid-State Electronics, 2010, Vol.54, 8, pp.787-790 | en_US |
| dc.identifier.uri | https://idr.nitk.ac.in/handle/123456789/13119 | |
| dc.title | Studies on vacuum deposited p-ZnTe/n-ZnSe heterojunction diodes | en_US |
| dc.type | Article | en_US |
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