Effect of annealing on the properties of Bi doped ZnO thin films grown by spray pyrolysis technique

dc.contributor.authorSadananda, Kumar, N.
dc.contributor.authorBangera, K.V.
dc.contributor.authorShivakumar, G.K.
dc.date.accessioned2020-03-31T08:22:55Z
dc.date.available2020-03-31T08:22:55Z
dc.date.issued2014
dc.description.abstractThe effect of annealing temperature on the structural, optical and electrical properties of transparent and conducting Bi doped ZnO (BZO) films deposited on glass substrate by spray pyrolysis technique was investigated. The BZO thin films were annealed in the temperature range from 450 C to 550 C for 4 h in air atmosphere. The grain size of the BZO films increased with increasing annealing temperature. The annealed BZO films were electrically stable and there was a drastic change in the electrical conductivity after annealing. The films annealed at 500 C showed better conductivity and optical transmittance. 2014 Elsevier Ltd. All rights reserved.en_US
dc.identifier.citationSuperlattices and Microstructures, 2014, Vol.75, , pp.303-310en_US
dc.identifier.urihttps://idr.nitk.ac.in/handle/123456789/10697
dc.titleEffect of annealing on the properties of Bi doped ZnO thin films grown by spray pyrolysis techniqueen_US
dc.typeArticleen_US

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