Characterization of p-CdTe/n-CdS hetero-junctions
| dc.contributor.author | Mahesha, M.G. | |
| dc.contributor.author | Bangera, K.V. | |
| dc.contributor.author | Shivakumar, G.K. | |
| dc.date.accessioned | 2020-03-31T08:18:42Z | |
| dc.date.available | 2020-03-31T08:18:42Z | |
| dc.date.issued | 2009 | |
| dc.description.abstract | Nano-crystalline CdTe/CdS thin film hetero-junctions have been grown on glass substrate by thermal evaporation technique. The growth conditions to get stoichiometric compound films have been optimized. The grown hetero-junctions have been characterized for their I-V characteristics. Analysis of I-V characteristics has been made to investigate the current conduction mechanism in p-CdTe/n-CdS hetero-junction. The band gap energy of cadmium telluride and cadmium sulfide films have been computed from the study of variation of resistance with temperature. Based on the study, band diagram for p-CdTe/n-CdS hetero-junction has been proposed. | en_US |
| dc.identifier.citation | Materials Science in Semiconductor Processing, 2009, Vol.12, 3, pp.89-93 | en_US |
| dc.identifier.uri | https://idr.nitk.ac.in/handle/123456789/10191 | |
| dc.title | Characterization of p-CdTe/n-CdS hetero-junctions | en_US |
| dc.type | Article | en_US |
Files
Original bundle
1 - 1 of 1