The p-type doping of vacuum deposited ZnTe thin films with bismuth by a new technique of using nano-spheres

dc.contributor.author	Rao, G.K.
dc.contributor.author	Shivakumar, G.K.
dc.contributor.author	Kasturi, V.B.
dc.date.accessioned	2020-03-31T08:45:46Z
dc.date.available	2020-03-31T08:45:46Z
dc.date.issued	2010
dc.description.abstract	The present paper reports the successful doping of vacuum evaporated zinc telluride (ZnTe) thin films with bismuth by a new technique of using nano-spheres. The discontinuous films of bismuth (the dopant material), containing bismuth in the form of nano-spheres, were prepared by vacuum evaporation and the ZnTe films were then deposited on top of them. The scanning electron microscopy (SEM) and X-ray diffraction (XRD) techniques were used to ascertain the formation of discontinuous bismuth films and the proper diffusion of bismuth in ZnTe films, respectively. After doping, the carrier concentration of the ZnTe films was found to increase by an order of the magnitude. The electrical conductivity also improved significantly. The photoconductivity and photo-response properties of the doped films were also analysed. 2010 Elsevier B.V. All rights reserved.	en_US
dc.identifier.citation	Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 2010, Vol.175, 2, pp.185-188	en_US
dc.identifier.uri	https://idr.nitk.ac.in/handle/123456789/13393
dc.title	The p-type doping of vacuum deposited ZnTe thin films with bismuth by a new technique of using nano-spheres	en_US
dc.type	Article	en_US

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