Semi-λ Type Single Phase Differential Boost Inverter With High Voltage Gain

Abstract

The conventional differential boost inverters have limited voltage gain due to the inductor's parasitic resistance, which limits the output voltage ranges as the duty cycle approaches unity and causes a narrow input voltage range. Moreover, it is also vulnerable to shoot-through problems and a dc-offset problem that leads to high voltage stress across capacitors. The proposed two winding magnetically coupled semi Γ-type structures produce high voltage boosting with decreasing turns ratio (1 < K < 2). The modified PWM scheme is implemented to operate the proposed inverter to overcome the dc-offset problem in output capacitors, which further reduces the voltage stress on the system. Furthermore, provides step-up sinusoidal output voltage/current without LC-filter, dead time, and shoot-through operation. The designed prototype is analyzed for Silicon and silicon carbide (SiC) switch using PSIM thermal module. The features of the proposed inverter are comprehensively compared with state-of-the-art topologies. Finally, the simulation and experimental findings verify the proposed topology. © 2004-2012 IEEE.