Crystallization kinetics of Sn doped Ge20Te80?xSnx (0 ? x ? 4) chalcogenide glassy alloys

Abstract

Chalcogenide semiconductors have evolved as multifunctional materials due to their fascinating thermal, optical, electrical and mechanical properties. In this report, Ge<inf>20</inf>Te<inf>80?x</inf>Sn<inf>x</inf> (0 ? x ? 4) glassy alloys are systematically studied in order to understand the effect of variation of Sn content on the thermal parameters such as glass transition (T<inf>g</inf>) onset crystallization (T<inf>c</inf>), peak crystallization (T<inf>p</inf>), melting temperature (T<inf>m</inf>), activation energy of glass transition (E<inf>g</inf>), and crystallization (E<inf>c</inf>). The values of E<inf>g</inf> are calculated from the variation of T<inf>g</inf> with the heating rate (?), according to Kissinger and Moynihan model, while the values of E<inf>c</inf> are calculated from the variation of T<inf>p</inf> with the heating rate (?), according to Kissinger, Takhor, Augis-Bennett and Ozawa model. Thermal stability and glass forming ability (GFA) are discussed for understanding the applicability of the synthesized materials in phase change memory (PCM) applications. Thermal parameters are correlated with the electrical switching studies to get an insight into the phase change mechanism. The results of the calculated thermal parameters reveal that the GFA of the synthesized Ge<inf>20</inf>Te<inf>80?x</inf>Sn<inf>x</inf> (0 ? x ? 4) glassy alloys has a synchronous relationship with their thermal properties studied through differential scanning calorimetry, indicating their potential for phase-change memory device applications. © 2017 Elsevier B.V.