Properties of antimony doped ZnO thin films deposited by spray pyrolysis technique
No Thumbnail Available
Date
2015
Authors
Sadananda, Kumar, N.
Bangera, K.V.
Shivakumar, G.K.
Journal Title
Journal ISSN
Volume Title
Publisher
Abstract
Antimony (Sb) doped zinc oxide (ZnO) thin films were deposited on the glass substrate at 450 C using spray pyrolysis technique. Effect of Sb doping on surface morphology structural, optical and electrical properties were studied. X-ray diffraction (XRD) analysis showed that both the undoped and doped ZnO thin films are polycrystalline in nature with (101) preferred orientation. SEM analysis showed a change in surface morphology of Sb doped ZnO thin films. Doping results in a marked increase in conductivity without affecting the transmittance of the films. ZnO films prepared with 3 at % Sb shows the lowest resistivity of 0.185 Ohm cm with a Hall mobility of 54.05 cm2 V 1 s 1, and a hole concentration of 6.25 1017 cm 3. 2015, Pleiades Publishing, Ltd.
Description
Keywords
Citation
Semiconductors, 2015, Vol.49, 7, pp.899-904