Triple reduced surface field drain extended MOS device design and its RF performance evaluation for sub-micron RF SoC platform

Abstract

This paper presents the design of RESURF based non-conventionalDrain ExtendedMOS (DEMOS) and its parametric analysis. The work investigates the impact of three primary parameters relating to p-implant, namely implant placement distance, implant doping and implant thickness, on device performance and premature avalanche breakdown. To avoid undesirable implant-drain punch-through, a boundary of limits is proposed near drain. Further, the implant parameters are optimized to maximize the ratio of Breakdown Voltage (BV<inf>t</inf>) to ON-resistance (R<inf>ON</inf>). A breakdown voltage of 21 V at a low R<inf>ON</inf> of 2.5 kΩ was achieved for a device gate length of 250 nm and gate oxide thickness of 5 nm. Using the optimized device design, the RF/Analog performance parameters are extracted and evaluated to enhance the suitability of the device for high voltage I/O applications in Sub-micron RF-SoC. © © 2017 American Scientific Publishers All rights reserved Printed in the United States of America.