Graphene Straintronics by Molecular Trapping

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dc.contributor.authorSrivastava, P.K.
dc.contributor.authorKhandelwal, V.
dc.contributor.authorReddy, I.R.
dc.contributor.authorTarafder, K.
dc.contributor.authorGhosh, S.
dc.date.accessioned2026-02-03T13:19:18Z
dc.date.issued2025
dc.description.abstractHere, we report on controlling strain in graphene by trapping molecules at the graphene–substrate interface and leveraging molecular dipole moments. Spectroscopic and transport measurements reveal that strain correlates with the dipole moments of trapped molecules extending beyond their molecular sizes, where values ranging from 1.5 to 4.9D lead to a 50-fold increase in strain and a significant rise in residual carrier density. This has been possible by charge transfer between graphene and trapped molecules, altering the C?C bond length and causing biaxial strain. First-principles density functional theory calculations confirm a consistent dependence of the bending height on molecular dipole moments. © 2025 American Chemical Society
dc.identifier.citationJournal of Physical Chemistry C, 2025, 129, 41, pp. 18530-18536
dc.identifier.issn19327447
dc.identifier.urihttps://doi.org/10.1021/acs.jpcc.5c04013
dc.identifier.urihttps://idr.nitk.ac.in/handle/123456789/20024
dc.publisherAmerican Chemical Society
dc.subjectBond length
dc.subjectCharge transfer
dc.subjectDensity functional theory
dc.subjectDipole moment
dc.subjectInterfaces (materials)
dc.subjectMolecules
dc.subjectC-C bonds
dc.subjectGraphene substrates
dc.subjectGraphenes
dc.subjectMolecular dipole moment
dc.subjectMolecular size
dc.subjectResidual carrier density
dc.subjectSpectroscopic measurements
dc.subjectSubstrate interface
dc.subjectTransport measurements
dc.subjectTrapped molecules
dc.subjectGraphene
dc.titleGraphene Straintronics by Molecular Trapping

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