Photoconductivity and photo-detecting properties of vacuum deposited ZnSe thin films

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dc.contributor.authorRao, G.K.
dc.contributor.authorBangera, K.V.
dc.contributor.authorShivakumar, G.K.
dc.date.accessioned2026-02-05T09:35:37Z
dc.date.issued2011
dc.description.abstractThe paper reports the detailed analysis of photoconductivity and photo-detecting properties of vacuum deposited zinc selenide (ZnSe) thin films. The vacuum deposited ZnSe films were found to have high absorption coefficient and showed peak photo-response at 460 nm. The photocurrent and photo-response time of the films were measured as a function of substrate temperature and annealing conditions. Considerable increase in photocurrent and much faster photo-response was observed in films deposited at high substrate temperatures. Annealing at moderate temperatures also improved the photoconductivity and response time of the films. © 2011 Elsevier Masson SAS. All rights reserved.
dc.identifier.citationSolid State Sciences, 2011, 13, 11, pp. 1921-1925
dc.identifier.issn12932558
dc.identifier.urihttps://doi.org/10.1016/j.solidstatesciences.2011.08.017
dc.identifier.urihttps://idr.nitk.ac.in/handle/123456789/27161
dc.subjectAbsorption coefficients
dc.subjectAnnealing condition
dc.subjectHigh substrate temperature
dc.subjectModerate temperature
dc.subjectPhotoresponses
dc.subjectSubstrate temperature
dc.subjectZinc selenide
dc.subjectZnSe films
dc.subjectZnSe thin films
dc.subjectPhotoconductivity
dc.subjectPhotodetectors
dc.subjectThin films
dc.subjectVacuum
dc.subjectPhotoelectricity
dc.titlePhotoconductivity and photo-detecting properties of vacuum deposited ZnSe thin films

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