A new design approach of Rat-Race coupler based compact GaN HEMT power amplifier towards flat high efficiency over broadband
| dc.contributor.author | Gupta, M.P. | |
| dc.contributor.author | Kumar, S. | |
| dc.contributor.author | Naik Jatoth, D. | |
| dc.contributor.author | Gorre, P. | |
| dc.contributor.author | Song, H. | |
| dc.date.accessioned | 2026-02-04T12:24:51Z | |
| dc.date.issued | 2024 | |
| dc.description.abstract | This paper presents a high efficiency Rat-Race Coupler based compact GaN HEMT power amplifier (PA) design over broadband for high power transmitter in wireless communication. The rat-race coupler integrated PA Compact design is proposed for the first time as per author best knowledge. The design methodology used a higher order two open stubs and a rat-race coupler (RRC) at input/output sections to control harmonics impedances. The RRC is used to enhance the i/o power, and efficiency over broadband, which provides a good insertion loss, and consumes the least power and non-crucial impedance bandwidth for the normalized frequency band of interest. As a proof of concept, a PA is fabricated using a monolithic microwave integrated circuit (MMIC) 0.15 µm gallium nitride high electron mobility transistor (GaN HEMT) process. The measured result shows that the designed PA achieves a flat power added efficiency (PAE) of 65 % − 74 %, output power (P<inf>out</inf>) of 44.8 dBm − 46 dBm, and drain efficiency (DE) of 72 % − 85 %, over a record wide frequency of 1.8 GHz − 3.6 GHz, which is the highest one among all reported harmonic tuned PAs. © 2024 Elsevier GmbH | |
| dc.identifier.citation | AEU - International Journal of Electronics and Communications, 2024, 178, , pp. - | |
| dc.identifier.issn | 14348411 | |
| dc.identifier.uri | https://doi.org/10.1016/j.aeue.2024.155279 | |
| dc.identifier.uri | https://idr.nitk.ac.in/handle/123456789/21145 | |
| dc.publisher | Elsevier GmbH | |
| dc.subject | Broadband amplifiers | |
| dc.subject | Efficiency | |
| dc.subject | Electric connectors | |
| dc.subject | Electric impedance | |
| dc.subject | Harmonic analysis | |
| dc.subject | High electron mobility transistors | |
| dc.subject | III-V semiconductors | |
| dc.subject | Microwave amplifiers | |
| dc.subject | Monolithic microwave integrated circuits | |
| dc.subject | Power amplifiers | |
| dc.subject | Timing circuits | |
| dc.subject | Waveguide couplers | |
| dc.subject | Gallium nitride high electron mobility transistor | |
| dc.subject | Harmonic networks | |
| dc.subject | High electron-mobility transistors | |
| dc.subject | Multi-harmonic network | |
| dc.subject | Multiharmonic | |
| dc.subject | Open-stubs | |
| dc.subject | Power amplifier | |
| dc.subject | Power-efficiency | |
| dc.subject | Rat-race coupler | |
| dc.subject | Gallium nitride | |
| dc.title | A new design approach of Rat-Race coupler based compact GaN HEMT power amplifier towards flat high efficiency over broadband |
