Optoelectronic properties of graphene silicon nano-texture

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dc.contributor.authorBrahmanandam, J.
dc.contributor.authorAjmalghan, M.
dc.contributor.authorAbhilash, R.K.
dc.contributor.authorMahapatra, D.R.
dc.contributor.authorRahaman, M.R.
dc.contributor.authorHegde, G.M.
dc.date.accessioned2020-03-30T10:22:33Z
dc.date.available2020-03-30T10:22:33Z
dc.date.issued2014
dc.description.abstractGraphene on silicon with silicon dioxide quantum dots is a promising opto-electronic material. The optical band gap and the corresponding optical conductivity are estimated using the density functional approach with the combination of molecular dynamics. The regular repeating unit cell of graphene silicon nano-texture is identified using the classical molecular dynamics simulations. Electronic calculations predict the optical band gap is around 0.2 eV and the optical conductivity is identified to be 0.3 times the quantum conductance. � 2014 IEEE.en_US
dc.identifier.citation2014 IEEE 2nd International Conference on Emerging Electronics: Materials to Devices, ICEE 2014 - Conference Proceedings, 2014, Vol., , pp.-en_US
dc.identifier.urihttps://idr.nitk.ac.in/handle/123456789/8674
dc.titleOptoelectronic properties of graphene silicon nano-textureen_US
dc.typeBook chapteren_US

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