Study of the aluminium oxide doped zinc oxide thin films prepared by thermal evaporation technique

Abstract

The present study reports the observations made on investigations carried out to study structural, optical and electrical properties of aluminium oxide doped ZnO thin films obtained by thermal evaporation technique. Films obtained are found to be amorphous in nature with smooth and continuous surface. Room temperature conductivity of the film is found to be 5x10 3 U -1 cm -1 with visible region transmittance of above 95%. The optical energy gap of the film is found to be 3.25 eV. From the calculations of activation energy, it is observed that the doped ZnO film has two donor levels, one at 142 meV and other at 43 meV. A detailed analysis of the result is reported. © 2012 Asian Network for Scientific Information.