0.5 V, low power, 1 MHz low pass filter in 0.18 μm CMOS process

dc.contributor.authorVasantha, M.H.
dc.contributor.authorLaxminidhi, T.
dc.date.accessioned2026-02-06T06:40:19Z
dc.date.issued2012
dc.description.abstractIn this paper a low power continuous-time 4th order low pass Butterworth filter operating at power supply of 0.5 V is presented. A 3-dB bandwidth of 1 MHz using technology node of 0.18 μm is achieved. In order to achievenecessary head-room, the filter uses pseudo-differential bulk-driven transconductor. A master-slave based common modefeedback(CMFB) circuit sets the output common mode voltageof transconductor. The simulation results show that the filter has a dynamic range of 54 dB and consumes a total power of 36 μW when operating at a supply voltage of 0.5 V. The Figure of Merit (FOM) achieved by the filter is 0.05 fJ, lowest among similar low-voltage filters found in the literature. The simulation result show that the 3-dB bandwidth variation for process, voltage and temperature is less than ±10%. © 2012 IEEE.
dc.identifier.citationProceedings - 2012 International Symposium on Electronic System Design, ISED 2012, 2012, Vol., , p. 33-37
dc.identifier.urihttps://doi.org/10.1109/ISED.2012.46
dc.identifier.urihttps://idr.nitk.ac.in/handle/123456789/32841
dc.subjectBulk-driven
dc.subjectContinuous-time
dc.subjectLow-pass filter
dc.subjectTransconductor
dc.title0.5 V, low power, 1 MHz low pass filter in 0.18 μm CMOS process

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