Mm-wave cmos power amplifiers for 5g

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dc.contributor.authorGorre, P.
dc.contributor.authorKumar, R.
dc.contributor.authorSong, H.
dc.contributor.authorKumar, S.
dc.date.accessioned2026-02-08T16:50:22Z
dc.date.issued2021
dc.description.abstractThe chapter discusses the basic elements in the design of mm-wave CMOS Power Amplifier (PA) for phased arrays integration, focusing the next-generation 5G mobile communication. Power Amplifier design metrics, along with implementation of beam-forming phased arrays to merge power over-the-air are discussed in brief. The explanation begins with CMOS unique advantages, real-time handset challenges, system-level constraints, and design challenges are conceptually demonstrated with the help of a basic single-stage transistor Power Amplifier. © Springer Nature Singapore Pte Ltd. 2021.
dc.identifier.citationLecture Notes in Electrical Engineering, 2021, Vol.719, , p. 117-132
dc.identifier.isbn9789819680023
dc.identifier.isbn9789819542734
dc.identifier.isbn9789819540440
dc.identifier.isbn9789819658473
dc.identifier.isbn9789819600571
dc.identifier.isbn9783032147417
dc.identifier.isbn9789819540488
dc.identifier.isbn9789819644292
dc.identifier.isbn9789819637577
dc.identifier.isbn9789819663392
dc.identifier.issn18761100
dc.identifier.urihttps://doi.org/10.1007/s11665-025-11054-3
dc.identifier.urihttps://idr.nitk.ac.in/handle/123456789/33762
dc.publisherSpringer Science and Business Media Deutschland GmbH
dc.titleMm-wave cmos power amplifiers for 5g

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