Strain induced anisotropic mechanical and electronic properties of 2D-SiC

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dc.contributor.authorManju, M.S.
dc.contributor.authorAjith, K.M.
dc.contributor.authorValsakumar, M.C.
dc.date.accessioned2026-02-05T09:31:21Z
dc.date.issued2018
dc.description.abstractA silicene derivative of the form SiC was thoroughly investigated on its behaviour with changes in stress varying from around 140 N/m to around 20 N/m and strain from ?0.2 to 0.3. Uniaxial stress (both zigzag and armchair) brought structural changes which reduced the symmetry of the system but biaxial stress brought no change in symmetry and shape of the material. Mechanical stability of the system was maintained upto a considerable stress in both uni- and biaxial cases and the system showed anisotropic behaviour with stress variations. Electronic structural variations showed strain engineering is a convenient method to tune the band gap very effectively causing semiconducting SiC to transform to metallic one at large stresses and direct to indirect bandgap in the semiconducting phase at lower stress. Charge density analysis showed a significant ionic nature of the material in the semiconducting phase. © 2018 Elsevier Ltd
dc.identifier.citationMechanics of Materials, 2018, 120, , pp. 43-52
dc.identifier.issn1676636
dc.identifier.urihttps://doi.org/10.1016/j.mechmat.2018.02.005
dc.identifier.urihttps://idr.nitk.ac.in/handle/123456789/25164
dc.publisherElsevier B.V.
dc.subjectAnisotropy
dc.subjectDensity (specific gravity)
dc.subjectDensity functional theory
dc.subjectElectronic properties
dc.subjectEnergy gap
dc.subjectMechanical properties
dc.subjectMechanical stability
dc.subjectSemiconducting silicon compounds
dc.subjectSilicon carbide
dc.subjectSilicon compounds
dc.subjectSystem stability
dc.subjectWide band gap semiconductors
dc.subject2D-SiC
dc.subjectAnisotropic behaviours
dc.subjectCharge-density analysis
dc.subjectIonic nature
dc.subjectMechanical and electronic properties
dc.subjectNon linear
dc.subjectStrain engineering
dc.subjectStructural variations
dc.subjectStresses
dc.titleStrain induced anisotropic mechanical and electronic properties of 2D-SiC

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