Performance and Reliability Codesign for Superjunction Drain Extended MOS Devices

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dc.contributor.authorSomayaji, J.
dc.contributor.authorKumar, B.S.
dc.contributor.authorBhat, M.S.
dc.contributor.authorShrivastava, M.
dc.date.accessioned2026-02-05T09:32:06Z
dc.date.issued2017
dc.description.abstractConventionally, integrated drain-extended MOS (DeMOS) like high-voltage devices are designed while keeping only performance targets for a given application in mind. In this paper, for the first time, performance and reliability codesign approach using 3-D TCAD has been presented for various superjunction (SJ) type DeMOS devices. In this context, how to effectively utilize the SJ concept in a DeMOS device for System on Chip applications, which often has stringent switching and RF performance targets, is explored in detail in this paper. Moreover, design and reliability tradeoffs for switching and RF applications are discussed, while considering two unique sets, one with fixed breakdown voltage and other with fixed ON-resistance. Finally, hot carrier generation, safe operating area concerns, and electrostatic discharge physics are explored and compared using 3-D TCAD simulations. © 1963-2012 IEEE.
dc.identifier.citationIEEE Transactions on Electron Devices, 2017, 64, 10, pp. 4175-4183
dc.identifier.issn189383
dc.identifier.urihttps://doi.org/10.1109/TED.2017.2733043
dc.identifier.urihttps://idr.nitk.ac.in/handle/123456789/25488
dc.publisherInstitute of Electrical and Electronics Engineers Inc.
dc.subjectDoping (additives)
dc.subjectElectric currents
dc.subjectElectric resistance
dc.subjectElectronic design automation
dc.subjectElectrostatic devices
dc.subjectElectrostatic discharge
dc.subjectElectrostatics
dc.subjectHeterojunction bipolar transistors
dc.subjectHot carriers
dc.subjectIons
dc.subjectLaser optics
dc.subjectLogic gates
dc.subjectReliability
dc.subjectSemiconductor junctions
dc.subjectSystem-on-chip
dc.subjectDrain extended MOS (DeMOS)
dc.subjectHot carrier injection
dc.subjectPerformance evaluation
dc.subjectSafe operating area
dc.subjectSuperjunctions
dc.subjectMOS devices
dc.titlePerformance and Reliability Codesign for Superjunction Drain Extended MOS Devices

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