Faculty Publications
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Item Microstructure and tribological behavior of plasma sprayed NiCrAlY/WC-Co/cenosphere/solid lubricants composite coatings(Elsevier B.V., 2018) Doddamani, M.; Mathapati, M.; Ramesh, M.R.Present investigation deal with NiCrAlY/WC-Co/Cenosphere/MoS2/CaF2, NiCrAlY/WC-Co/Cenosphere/MoS2/CaSO4 and NiCrAlY/WC-Co/Cenosphere coatings deposited on MDN 321 steel using atmospheric plasma spraying. Tribological properties of MDN 321 steel and coatings are evaluated from room temperature (RT) to 600 °C under dry lubrication conditions using a pin on disc high-temperature tribometer. Scanning Electron Microscopy (SEM), X-ray diffraction (XRD) and Energy Dispersive Spectroscopy (EDS) are used to characterize the coatings. Presence of cenospheres in these coatings might effectively reduce wear acting as localized regions accumulating wear debris. The result shows that wear rate of all the coatings are lower as compared to MDN 321 substrate at all the test conditions. NiCrAlY/WC-Co/Cenosphere/MoS2/CaF2 and NiCrAlY/WC-Co/Cenosphere/MoS/CaSO4 coatings registered lower friction coefficient as compared to NiCrAlY/WC-Co/Cenosphere coating and MDN 321 substrate. Characterization of the NiCrAlY/WC-Co/Cenosphere/MoS2/CaF2 and NiCrAlY/WC-Co/Cenosphere/MoS2/CaSO4 coatings worn out surface suggests that MoS2 provides lubrication at 200 °C and formation of CaMoO4, MoO3 through tribo chemistry reaction at higher temperature provides lubrication at 600 °C. SEM micrograph of worn surface demonstrates that the main wear mechanism is plowing and delamination. © 2018 Elsevier B.V.Item SnO2 nanoparticles functionalized MoS2 nanosheets as the electrode material for supercapacitor applications(Institute of Physics Publishing helen.craven@iop.org, 2019) Prabukumar, C.; Mohamed, M.; Krishna Bhat, D.; Udaya Bhat, K.Tin oxide (SnO2) nanoparticles undergo the volume expansion during an electrochemical cycle. This volume expansion leads to discontinuities in the form of microcracks in the electrode material. The problem of charge transportation associated with this microcracking limits the application of SnO2 in the energy storage application such as supercapacitors. The present work approached to solve this problem by incorporating the MoS2 nanosheets along with the SnO2 nanoparticles. The SnO2 nanoparticles are functionalized onto the surface of the MoS2 nanosheets by the ligand exchange process. The MoS2 nanosheets act as the support material for the SnO2 nanoparticles. The electrode material prepared using SnO2 nanoparticles and nanocomposite of SnO2 functionalized MoS2 nanosheets are tested by cyclic voltammetry and galvanostatic charge-discharge measurements. The specific capacity of the MoS2-SnO2 nanocomposite is calculated to be 61.6 F g-1 which is 4.4 fold higher than that of bare SnO2 nanoparticles. The improvement in the electrochemical performance of SnO2 is attributed to the high surface area and the charge transportation provided by the MoS2 nanosheets. © 2019 IOP Publishing Ltd.Item Performance evaluation of molybdenum dichalcogenide (MoX2; X= S, Se, Te) nanostructures for hydrogen evolution reaction(Elsevier Ltd, 2019) Bhat, K.S.; Nagaraja, H.S.Hydrogen evolution reaction (HER) using transition metal dichalcogenides (TMDs) have gained interest owing to their low-cost, abundancy and predominant conductivity. However, forthright comparisons of transition metal chalcogenides for HER are scarcely conducted. In this work, we report the synthesis of series of molybdenum chalcogenide nanostructures MoX2 (X = S, Se, Te) via a facile hydrothermal method. Used as an electrocatalyst for HER, MoS2 nanograins, MoSe2 nanoflowers and MoTe2 nanotubes could afford the benchmark current densities of 10 mA cm?2 at the overpotentials of ?173 mV, ?208 mV and ?283 mV with the measured Tafel slope values of 109.81 mV dec?1, 65.92 mV dec?1 and 102.06 mV dec?1, respectively. Besides other factors influencing HER, the role of electronic conductivity in HER of these molybdenum dichalcogenides are elucidated. In addition, the presented molybdenum dichalcogenides in this work are also complimented with robustness as determined from high-current density stability measurements. © 2019 Hydrogen Energy Publications LLCItem Evaluation of semiconducting p-type tin sulfide thin films for photodetector applications(Academic Press, 2019) Barman, B.; Bangera, K.V.; Shivakumar, G.K.Tin sulfide (SnS) is an important semiconductor as it is one of the less common p-type materials with a bandgap of 1.53 eV which makes it an attractive material for photo detector application. In the thin film form, it is a sensitive photo conductor with attractive opto-electronic characteristics. In the current report, tin sulfide thin films have been deposited by thermal evaporation in vacuum and the influence of substrate temperature on its compositional, morphological, structural, and opto-electrical properties was studied. X-ray diffraction (XRD) study shows that all the thermally deposited films are having an orthorhombic crystal structure along (111) plane as pre-dominant orientation and are polycrystalline in nature. Raman analysis verify the occurrence of SnS and Sn2S3 phases in the films. Surface morphology along with the elemental composition of the films was determined by scanning electron microscopy (SEM) in combination with energy dispersive spectroscopy (EDS). All the films were found to be homogeneous, uniform, pin-hole free and have high optical transmittance in the UV–Vis wavelength region. The optical bandgap energy of the films was calculated using Tauc's relation and it was found to be decreasing (1.576 eV–1.429 eV) with increasing substrate temperature. The activation energy of the SnS thin films was calculated from Arrhenius plot and it was also found to be decreasing with increasing substrate temperature. The opto-electrical parameters such as photo conductivity (?L), dark conductivity (?D), response time (?r), recovery time (?d), photoresponsivity (R), and photosensitivity (S) were calculated and was found best for the films grown at 323 K. © 2019 Elsevier LtdItem Fluorescent MoS2 Quantum Dot-DNA Nanocomposite Hydrogels for Organic Light-Emitting Diodes(American Chemical Society service@acs.org, 2020) Pandey, P.K.; Ulla, H.; Satyanarayan, M.N.; Rawat, K.; Gaur, A.; Gawali, S.; Hassan, P.A.; Bohidar, H.B.In this study, we report the synthesis of water-soluble MoS2 quantum dots (MoS2, QD) by a hydrothermal one-step method. These QDs were mixed in an aqueous solution of 2 kbp DNA to form fluorescent nanocomposite hydrogels at a very low concentration of the nucleic acid (1.0% (w/v), normal gelation occurs at 2% (w/v)). The melting temperature Tmelt of these gels was 50 ± 2 °C while the hydrogels melt at 40 ± 2 °C, and the low-frequency storage modulus/gel strength G0 was 40 ± 2 Pa (9 ± 2 Pa for hydrogel). This clearly implied that MoS2 acted as a pseudo-cross-linker in the nanocomposite hydrogel formation. The remarkable synergy of interaction between DNA and QDs can be gauged from the fact that the gel strength and melting temperature increased with QD content regardless of the fact that both carried negative charge. Dynamic light scattering studies showed arrested dynamics at the onset of gelation, and the gel transition time or ergodicity breaking time ?EB decreased with the increase in QD concentration. Small-angle X-ray scattering data captured the internal structure of these gels. Thus, we have a unique nanocomposite DNA-based hydrogel that is fluorescent, and in 2-D, this soft matter remarkably exhibits the behavior of an organic light-emitting diode (OLED), which imparts sufficient novelty to this work. © © 2020 American Chemical Society.Item Improving hydrogen evolution reaction and capacitive properties on CoS/MoS2 decorated carbon fibers(Elsevier Ltd, 2020) Sangeetha, D.N.; Krishna Bhat, D.; Senthil Kumar, S.; Muthu, M.We report a facile method to transform abundantly dumped banana stem fibers into carbon fibers (CFs) useful for energy applications. The CFs surface area is increased by varying the quantity of KOH activation to 488 m2g-1. The solvothermal method is used to synthesize CoS, CoS/MoS2 and also grown on the activated carbon fibers (ACFs). Nano nodules of CoS arranged into sheets and layers of MoS2 stacked together were found in FESEM analysis. The morphology of the CoS/MoS2 differs when grown on ACFs. The growth of CoS/MoS2 along the ACFs length prevents any stacking of the pseudocapacitance materials. The ternary composite ACFs/CoS/MoS2 exhibits superior supercapacitor behavior as well as hydrogen evolution reaction (HER) due to the synergetic effect of the conducting ACF surface and redox active CoS/MoS2. A maximum specific capacitance of 733 Fg-1, energy and power density of 33 WhKg?1 and 999 WKg-1 respectively are obtained. A low Tafel slope value of 61 mVdec?1 is obtained for the ACFs/CoS/MoS2 ternary composite electrode. The present work therefore offers a fresh insight into the effective conversion of waste materials into electrode material for energy storage and conversion applications. © 2019 Hydrogen Energy Publications LLCItem Solvent selection for highly reproducible carbon-based mixed-cation hybrid lead halide perovskite solar cells via adduct approach(Elsevier Ltd, 2020) Keremane, K.S.; Prathapani, S.; Haur, L.J.; Damodaran, D.; Vasudeva Adhikari, A.V.; Priyadarshi, A.; Mhaisalkar, S.G.The major problem identified in carbon-based mixed cation perovskite solar cells (PSCs) is the selection of a suitable solvent for single-step solution-processed perovskite deposition in order to promote their scalable production. Herein we report a detailed study on the selection of appropriate solvent for the one-step deposition of cesium-formamidinium lead iodide (Cs0.1FA0.9PbI3) perovskite via Lewis acid-base adduct approach for fully printable mesoporous PSCs with mesoporous TiO2/ZrO2/C architecture. Highly reproducible Cs0.1FA0.9PbI3 solar cells were fabricated via adducts of PbI2 with eco-friendly dimethyl sulfoxide (DMSO). The best cells fabricated with the above approach yielded a photoconversion efficiency (PCE) of 12.33% for a small area device (active area: 0.09 cm2) and 10.1% for a large area device (active area 0.7cm2). The average power conversion efficiency for 62 PSCs was found to be 10.5% under an AM 1.5G illumination. Finally, the mixed cation perovskite in carbon architecture using the Lewis acid-base adduct approach is remarkably stable, with less than 1% change from the initial PCE after 1800h of storage under dark ambient conditions (25 °C, 60–70% RH). © 2020 International Solar Energy SocietyItem ZnxSn1-xS thin films: A study on its tunable opto-electrical properties for application towards a high efficient photodetector(Elsevier Ltd, 2020) Barman, B.; Bangera, K.V.; Shivakumar, G.K.Zinc sulfide (ZnS) and tin sulfide (SnS) are crucial semiconductors with potential use in various opto-electronic applications. By incorporating ZnS and SnS to form ZnxSn1-xS thin film, one can expect exceptional opto-electrical properties due to their large band gap dissimilarity. Herein, thin films of ZnxSn1-xS (0.0 ? x ? 1.0) were successfully deposited on glass substrates using a thermal evaporation method for the first time and its various properties were analyzed. X-ray diffraction (XRD) analysis confirmed the polycrystalline behavior of ZnxSn1-xS films with a preferred orientation along the (1 1 1) plane. The absence of any secondary peaks along with the shift in the (1 1 1) peak position to lower 2? values with increasing Zn concentration confirmed the formation of a solid solution. SEM analysis depicted the presence of uniform and homogeneous films. The formation of nearly stoichiometric ZnxSn1-xS films was verified using an energy dispersive spectroscopy (EDS). The electrical and optical properties of the films were estimated from the two-probe method and UV–Vis spectroscopy, respectively. The energy band gap values decreased from 3.49 eV to 1.54 eV as the composition of the ZnxSn1-xS films was varied. The various opto-electrical parameters were investigated and the photosensitivity was found highest at 43.38 for the Zn0.10Sn0.90S films. The observed tunable opto-electrical properties of the ZnxSn1-xS films suggests that the films can be utilized for a wide range of opto-electronic applications. © 2020 International Solar Energy SocietyItem Spin transport through metal-dichalcogenides layers: a study from first-principles calculations(IOP Publishing Ltd, 2020) Devaraj, N.; Tarafder, K.Spin transport through monolayer and trilayers of molybdenum dichalcogenides were studied considering Co as leads. Detailed investigations of the electronic structure of the Co/MoS2 interface and magnetic tri-junctions are carried out by using density functional theory calculations to understand transport behavior. The study revealed that new spin-polarized hybridized states appeared at the Fermi level due to the formation of Co/MoS2 interface that effectively acted as a spin filter and enhanced the spin injection efficiency of the systems. Spin-polarized current through the system as well as the magnetoresistance (MR) was estimated at different applied bias voltages. Large MR up to 78% was calculated for the trilayer MoS2 system at a relatively high applied bias voltage. The MR values are further improved by tuning the structure of the scattering region. A very large MR of 123% for MoS2/MoSe2/MoS2 trilayer at an applied bias 0.8 V was observed, which is much higher than the previously reported bias dependent MR values in similar systems. © 2020 IOP Publishing Ltd.Item Growth of Very Large MoS2Single Crystals Using Out-Diffusion Transport and Their Use in Field Effect Transistors(Institute of Electrical and Electronics Engineers Inc., 2021) Pandey, S.K.; Izquierdo, N.; Campbell, S.Monolayer molybdenum disulfide (MoS2) is an attractive 2D material with a wide range of potential applications in the field of electronics and optoelectronics. To obtain the best performance, it is very necessary to grow large area single crystals of MoS2 (single domain) to avoid the effects of grain boundaries, but is exceptionally challenging to do this. Here, we report a novel method which we call out-diffusion vapor transport to grow large area single crystal monolayer MoS2 using an otherwise conventional chemical vapor deposition system. In this method, microchannels were created on the boat to significantly limit the region where MoOx vapor can react with S vapor to form crystals. This growth method resulted in triangular monolayer MoS2 single crystals up to ?640 ?m on a side grown on an oxidized silicon substrate, the largest crystals reported to date. Most of these crystals were multilayer at the center. This common feature has been identified in the literature as partially reduced transition metal oxide nucleates a second layer. We also achieved fully monolayer MoS2 single crystals up to ?450 ?m on a side, the largest demonstrated without the MoOx. Fabricated field effect transistors (FET) using MoS2 monolayer crystal as the active layer demonstrate a conventional n-type behavior, room-temperature mobility up to 45.5 cm2 V-1 s-1 and a maximum ON-Current (ION)/OFF-current (IOFF) ratio of 1.8 × 107. Raman and Photoluminescence results indicate that the as-grown large area monolayer crystals have high crystalline quality and uniformity with minimal defects, a finding that is consistent with the high electron mobility. This research work provides a superior technique to grow large-area high-quality single-crystal monolayer MoS2 without resorting to exotic equipment or techniques. © 2002-2012 IEEE.