Faculty Publications
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Item Complex impedance spectroscopy properties of Fe3BO6 nanocrystallites prepared by combustion method(Elsevier Ltd, 2019) Kumari, K.; Ramteke, R.; Rahman, M.R.In this investigation, we report a part of our work on Impedance spectroscopy of Fe3BO6 nanoceramics prepared by a selfcombustion of a solid precursor mixture of 60Fe2O3-40B2O3 using camphor as a fuel in ambient air. A single phase compound Fe3BO6 of an orthorhombic crystal structure with Pnma space group and average crystallites size D = 42 nm is analyzed from the X-ray diffractogram. The Z?-value decreases with a shift in the peak frequency towards the higher side with rise in temperature arises possibly due to the presence of dipolar response in the material, which is in good agreement with the observation of complex impedance data. Temperature dependent impedance describes Fe3BO6 to be an ionic conductor; with activation energy (Ea) value0.73 eV. The Ea-values so obtained for the dielectric relaxation from the tp-values suggests a conduction mechanism involving the polaron hopping. © 2019 Elsevier Ltd. All rights reserved.Item Chitosan/NiO nanocomposites: A potential new dielectric material(2011) Bhatt, A.S.; Bhat, D.K.; Santosh, M.S.; Tai, C.-W.The study of electrochemical behavior of organic-inorganic nanocomposite materials remains a major challenge for application in energy storage devices. Here, new composite materials of chitosan and NiO nanoparticles have been fabricated. The NiO nanoparticles are well characterized by infrared spectroscopy, X-ray diffraction and transmission electron microscopy. The electrical properties of the films are studied by impedance spectroscopy at different temperatures; and thereby permittivity, electric modulus and conductivity data are obtained. By studying the variations in permittivity and electric modulus spectra with respect to applied frequency signal and temperature, the ionic conductivity of the material is investigated. The Correlated Barrier Hopping model is employed to understand the conduction mechanism. An admirable conductivity of 1.4 × 10-2 S cm -1 is obtained for a nanocomposite with 4 wt% NiO content. The activation energies of the composite films decrease with increase in NiO content, from 16.5 to 4.8 kJ mol-1. © 2011 The Royal Society of Chemistry.Item LiClO4-doped plasticized chitosan and poly(ethylene glycol) blend as biodegradable polymer electrolyte for supercapacitors(Institute for Ionics, 2013) Sudhakar, Y.N.; Muthu, M.; Bhat, D.K.Biodegradable polymer electrolyte comprising the blend of chitosan (CS) and poly(ethylene glycol) (PEG) plasticized with ethylene carbonate and propylene carbonate, as host polymer, and lithium perchlorate (LiClO4), as a dopant, was prepared by solution casting technique. The ionic conductivity has been calculated using the bulk impedance obtained through impedance spectroscopy. The variation of conductivity and dielectric properties has been investigated as a function of polymer blend ratio, plasticizer content and LiClO4 concentration at temperature range of 298-343 K. The DSC thermograms show two broad peaks for CS/PEG blend and increased with increase in the LiClO4 content. The maximum conductivity has been found to be 1. 1 × 10-4 S cm-1 at room temperature for 70:30 (CS/PEG) concentration. The electric modulus of the electrolyte film exhibits a long tail feature indicative of good capacitance. The activation energy of all samples was calculated using the Arrhenius plot, and it has been found to be 0. 12 to 0. 38 eV. A carbon-carbon supercapacitor has been fabricated using this electrolyte, and its electrochemical characteristics and performance have been studied. The supercapacitor showed a fairly good specific capacitance of 47 F g-1. © 2012 Springer-Verlag.Item Investigation of hole-injection in ?-NPD using capacitance and impedance spectroscopy techniques with F4TCNQ as hole-injection layer: Initial studies(Academic Press, 2014) Fernandes, J.M.; Raveendra Kiran, M.R.; Ulla, H.; Satyanarayan, M.N.; Umesh, G.The charge accumulation leading to injection at the organic interface in the sequentially doped hole-only device structure is studied using capacitance and impedance based spectroscopic techniques. In this paper, we investigate the role of p-type dopant 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) in the charge transport properties of N,N'-Di(1-naphthyl)-N,N'-diphenyl-(1,1?-biphenyl)-4,4?-diamine (?-NPD) through sequential deposition. We show that the hole injection into ?-NPD increases with the increase of interlayer (F4TCNQ) thickness by correlating the current density-voltage, capacitance-voltage, capacitance-frequency and impedance measurements. © 2014 Elsevier Ltd. All rights reserved.Item Investigation of hole transport in ?-NPD using impedance spectroscopy with F4TCNQ as hole-injection layer(Academic Press, 2015) Fernandes, J.M.; Raveendra Kiran, M.R.; Ulla, H.; Satyanarayan, M.N.; Umesh, G.The charge carrier transport is studied in N,N?-di(1-naphthyl)-N,N?-diphenyl-(1,1?-biphenyl)-4,4?-diamine (?-NPD) with the incorporation of sequentially doped p-type dopant 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) as hole-injection layer in hole-only device structures. The field dependent mobility of the charge carriers is determined using frequency dependent capacitance, conductance and impedance methods by varying the thickness of ?-NPD. The Poole-Frenkel zero-field mobility and the Poole-Frenkel coefficient thus obtained for each device in all the three methods is found to be almost constant. © 2015 Elsevier Ltd. All rights reserved.Item Optoelectronic properties of novel alkyl-substituted Triphenylamine derivatives(Elsevier B.V., 2017) Fernandes, J.M.; Swetha, C.; Appalnaidu, E.; Navamani, K.; Rao, V.J.; Satyanarayan, M.N.; Umesh, G.Hole transport characteristics in three new organic compounds based on triphenylamine (TPA) moiety are presented. The effect on electrical and optical properties of TPA, attached with methyl or tert-butyl side groups, has been investigated through measurement of current density versus voltage (J-V), capacitance versus voltage (C-V), frequency dependent capacitance, ac conductivity, Impedance spectroscopy, UV-Vis spectroscopy, Photoluminescence (PL) spectroscopy and X-Ray Diffraction (XRD) studies. These measurements reveal that, the attachment of methyl or tert-butyl group in the para-position of the TPA moiety leads to improved optoelectronic properties and greater molecular stability. XRD analysis of the samples indicates that the inter-molecular distance is the lowest for TPA with tert-butyl side group (3.43 Å) as compared to pure TPA (3.57 Å). This leads to stronger inter-molecular interaction as evidenced by the UV-Vis spectra. PL studies indicate significant Quantum Efficiency (?30%) for alkyl attached TPA. In order to get a better understanding of the charge transport phenomena, the effect of molecular structure dynamics on charge transfer kinetics is analyzed by evaluating the charge carrier hopping rate coefficient and dynamic state factor. The dynamic state factor b has higher value for lower bias voltage, corresponding to dc conductivity, whereas, at higher bias, the value of b is smaller, indicating the dominance of ac conductivity. Hopping conductivity is seen to be highest for the device with tert-butyl substitution in TPA moiety. Our experiments indicate an order of magnitude enhancement in charge carrier mobility for alkyl-substituted TPA. © 2017 Elsevier B.V.Item Optoelectronic properties of hybrid diodes based on vanadyl-phthalocyanine and zinc oxide(Academic Press, 2017) Raveendra Kiran, M.R.; Ulla, H.; Satyanarayan, M.N.; Umesh, G.We report an investigation of the optoelectronic properties of a hybrid p-n diode device fabricated using ZnO film prepared by sol-gel technique on which a VOPc organic film is deposited by vacuum evaporation. The charge transport properties of devices having the configurations ITO/ZnO/Al and ITO/ZnO/VOPc/MoO3/Al were investigated at different annealing temperatures (150 °C, 250 °C, 350 °C and 450 °C) by Impedance Spectroscopy (IS). The structural, morphological, optical and electrical properties were also studied at different annealing temperatures. The parameters related to the ITO/ZnO and ZnO/VOPc interfaces such as ideality factor (n), barrier height (q?B) and rectification ratio (RR) of the diodes were determined from current density-voltage (J-V) characteristics. IS measurements suggest that the large photocurrent generated is due to the decrease in bulk resistance of the device on account of the generation of electron-hole pairs in the organic active layer when exposed to light. The RR and the photocurrent responsivity (Rph) values obtained from the J-V characteristics compare well with those obtained from the IS measurements. It was observed that the absolute value of Rph (470 mA/W) for the p-n diode with ZnO annealed at 350 °C is high compared to that of diodes with different ZnO annealing temperatures. These values also agree well with the values obtained for p-n diodes of other phthalocyanines. Our studies clearly demonstrate that a p-n diode with ZnO film annealed at 350 °C exhibits much better optoelectronic characteristics on account of increased grain size, improved charge injection due to the reduction of barrier height and hence higher (up to 5 orders) charge carrier mobility. © 2017 Elsevier LtdItem Capacitance and impedance spectroscopy studies of polymer light emitting diodes based on MEH-PPV:BT blends(Elsevier Ltd, 2019) K M, N.K.; Sterin, N.S.; Das, P.P.; Umesh, G.; Satyanarayan, M.N.Light emitting polymer poly [2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV) is blended with a wide bandgap electron transport material benzothiadiazole (BT) and its effect on the electronic properties has been studied by capacitance and impedance spectroscopy (IS) in PLEDs. The impedance data is fitted using equivalent circuit models and the minimum parallel resistance (Rp) at zero bias have been obtained for 1:3 ratio of MEH-PPV:BT blended devices. The negative capacitance (NC) shows the occurrence of the trap-assisted non-radiative recombination mechanism at low frequencies in the unblended MEH-PPV PLEDs. Further, this behavior is seen to be reduced in PLEDs with MEH-PPV:BT blends. This clearly suggests that the blending of MEH-PPV and BT at different weight ratios results in the suppression of trap-assisted recombination. This can be attributed to the elimination of trap states due to the dilution of semiconductor material on account of the addition of wide bandgap host material. Moreover, the blended devices have shown a significant improvement in the conductivity at small bias voltages. © 2019 Elsevier B.V.Item Optoelectronic properties of hybrid diodes based on vanadyl- phthalocyanine and zinc oxide nanorods thin films(Elsevier B.V., 2019) Raveendra Kiran, M.; Ulla, H.; Satyanarayan, M.N.; Umesh, G.Herein, we report the optoelectronic properties of hybrid diodes fabricated using vanadyl phthalocyanine (VOPc) and zinc oxide nanorods (ZNR) with the configuration: ITO/ZNR/VOPc/MoO3/Al. Vertically aligned ZnO nanorods were grown using a simple aqueous solution (AS) method as a function of growth temperature. The correlation between the morphology of ZNR films and the optoelectronic properties of the ZNR/VOPc hybrid devices was investigated. The results show that the hybrid diodes with ZNR films grown at 120 °C offer the best optoelectronic properties. The higher photocurrent responsivity, Rph, (16.28 A/W) was achieved for devices with ZNR films grown at 120 °C. This value is 25 times higher than the Rph value obtained for the devices made with ZnO nanoparticle films that were reported earlier. © 2019Item Poly(1,6-heptadiyne)/NiFe2O4 composite as capacitor for miniaturized electronics(Bellwether Publishing, Ltd., 2020) Magisetty, R.; N R, H.; Shukla, A.; Shunmugam, R.; Balasubramanian, B.Impedance spectroscopy-based electrical measurements were conducted on different molecular weight (MW) Poly(1,6-heptadiyne)s (PHDs) embedded PHD/NiFe2O4 nanocomposites. Nanocomposites conductivity result demonstrated the conductivities of around (Formula presented.) (nanocomposite Root mean square (RMS) current is 12–15 times greater than DC current of PHDs at 27° C). Additionally, dielectric loss and capacitance characteristics suggested the nanocomposite (4500 MW PHD) device quality factor is 35.7 at 1 kHz, which is ~13.89 times superior than that of NiFe2O4 alone sample, also ‘Q’ value for highest MW PHD nanocomposite is 50% enhanced than NiFe2O4. Moreover, the capacitance result suggested the 12400 MW PHD nanocomposite nearly frequency-independent capacitance (15–20pF) over a frequency range of 500 Hz–500 kHz. © 2020 Taylor & Francis.