Faculty Publications
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Publications by NITK Faculty
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Item A Computer Aided Cooling Curve Analysis method to study phase change materials for thermal energy storage applications(Elsevier Ltd, 2016) Sudheer, R.; Prabhu, K.N.The suitability of a simple Computer Aided Cooling Curve Analysis (CACCA) technique for characterizing thermal energy storage phase change materials (PCM) was proposed in the present work. Two modes of CACCA, namely, Newtonian and Fourier techniques were used to predict the phase transition temperatures, the latent heat of fusion and thermal diffusivities of PCMs. Solidification of potassium nitrate and zinc-8% aluminium alloy (ZA8) was studied using CACCA method. These PCMs were chosen to demonstrate the ability of the proposed technique to characterize PCMs freezing at a single temperature as well as over a range of temperatures. CACCA method showed that potassium nitrate and ZA8 are suitable candidate materials for TES applications operating at 300-350 °C and 350-450 °C respectively. © 2015 Elsevier Ltd.Item Comparison of Phase-Shift and Modified Gating Schemes on Working of DC-DC LCL-T Resonant Power Converter(Institute of Electrical and Electronics Engineers Inc., 2021) Reddy, V.B.; Nagendrappa, H.This brief discusses the operation and performance comparison of LCL-T DC-DC resonant power converter when controlled with fixed-frequency phase-shifted gating (PSG) and modified-gating signals (MGS) schemes. The converter is designed to operate in lagging power factor mode to accomplish zero-voltage switching (ZVS) of the inverter switches. The operating principle of the converter with the two proposed gating schemes is explained. A brief steady-state analysis of the converter using Fourier series approach is presented. The choice between PSG and MGS schemes is made by comparing the performance of the converter. It is found that both the gating schemes are effective in regulating the output voltage for variable input voltage and loading conditions. However, the efficiency of the converter is found to be higher with MGS due to the fact that only one switch loses ZVS as compared to two with the PSG when operated with maximum input voltage. Also, the variation in pulse-width angle (?) required to regulate the output voltage is small in MGS as compared to that with PSG. A 300 W experimental prototype of the converter has been built and tested to verify the theoretical results. It is experimentally confirmed that the MGS control gives the better performance than the PSG control for different input voltage and loading conditions. © 2004-2012 IEEE.Item Review of thermal characterization techniques for salt-based phase change materials(Elsevier Ltd, 2022) Agarwala, S.; Prabhu, K.N.Phase change materials (PCM)-based energy storage system is a quite promising technology for the efficient usage of the excess solar energy produced and utilize it at the hour of high demand. The major challenge here is the selection of PCMs for energy storage applications. Inorganic PCMs possess higher thermal conductivity and energy storage capacity when compared to organic PCMs. Thus, inorganic PCMs have a great potential to be used in energy storage systems majorly in medium to high-temperature applications where organic PCMs cannot be used. An accurate and reliable data on the thermophysical properties of the PCMs is essential before its selection and installation of a energy storage system. In this study, various characterization methods based on calorimetry, temperature difference, cooling rate, and cooling curve used to date are described. Methods such as conventionally used differential scanning calorimetry (DSC), T-history method, and computer-aided cooling curve analysis (CACCA) are reviewed and discussed in this study. The two modes of CACCA, Newtonian, and Fourier techniques are explained. The advantages and limitations associated with all these methods are outlined. Inverse heat conduction problem (IHCP)-energy balance method based on CACCA which is devoid of the limitations associated with the conventional characterization methods is discussed. Thermal conductivity is the main characterization parameter of the PCMs and therefore methods to measure thermal conductivity are critically reviewed in this study. Thermal cycling stability is discussed in the context of the review. © 2021 Elsevier LtdItem Investigation of phosphorus-doping of MgZnO thin films using efficient spin-on dopant process(Elsevier B.V., 2023) Mishra, M.; Saha, R.; Tyagi, L.; Sushama, S.; Pandey, S.K.; Chakrabarti, S.Phosphorus doped MgZnO thin films were prepared using the RF sputtering technique on a Si wafer, followed by spin-on doping (SOD) and annealing. The SOD is a cheap and non-destructive process in which the dopant film is spun on a Si wafer and placed in the vicinity of deposited undoped MgZnO thin film at a high temperature to perform doping. After doping, the MgZnO thin films were annealed at temperatures such as 700, 800, and 900°C, which significantly improved morphological, structural, and optical properties. The atomic force microscopy and scanning electron microscopy measurements revealed that phosphorus-doped MgZnO thin films annealed at 800–900°C have good morphology and large grains. X-ray diffraction spectra demonstrated the (002) orientation of MgZnO thin films. The photoluminescence spectra measured at 20 K demonstrated the acceptor bound exciton peak at 3.47 eV and acceptor binding energy of around 64.34 meV, indicating the formation of shallow acceptor levels by phosphorus doping of MgZnO thin films using the SOD process. In Raman spectroscopy measurement, the peak of E2high phonons mode of MgZnO wurtzite structure was observed around 436 cm−1. The FWHM value of this peak reduces with augmentation annealing temperature, demonstrating improvement in crystallinity. X-ray photoelectron spectroscopy measurement demonstrated the presence of phosphorus atoms in the SOD processed MgZnO thin films, which is again verified by Fourier-transform infrared spectroscopy measurement showing vibration modes of P–O bonds. It was observed that the different properties of SOD-prepared phosphorus-doped MgZnO films were superior to the film prepared using the alternate costly and destructive ion-implantation technique. These findings have revealed that high-quality phosphorus-doped p-type MgZnO thin films by the SOD process are very suitable for UV optoelectronic device applications. © 2023 Elsevier B.V.Item Resonant DC/DC Converters: Investigating Phase-Shift Control(Multidisciplinary Digital Publishing Institute (MDPI), 2023) Reddy, V.B.; Mahajan, M.S.; Subramaniam, U.The paper presents an innovative approach to control the voltage of an LCL-T type converter at the output side against variation at input and load ports, utilizing a fixed-frequency phase-shift control scheme. The examination of the converter is performed employing a Fourier series method that takes into account the effect of n-harmonics. To assure high-frequency switches with a zero-voltage switching (ZVS) technique, the lagging pf mode is utilized. PSIM simulations were used to investigate the performance of a 300 W converter. With the minimal input voltage, all switches turn on with ZVS for all loading conditions, whereas the ZVS strategy loses by two switches when the voltage at the input is highest. The power loss calculations of each component are performed and presented in a pie chart. The findings of the experiments are presented and verified with theoretical and simulation results. It is demonstrated that for both input voltage and load fluctuations, a minor adjustment in pulse width is sufficient to keep the output voltage constant. © 2023 by the authors.Item Investigation of moving load-induced vibrations in layered functionally graded Terfenol-D beams: a differential quadrature method and analytical approach(Taylor and Francis Ltd., 2024) Patil, M.A.; Saraf, S.; Kadoli, R.; Naskar, S.The paper investigates the potential of the full-sinusoidal Fourier series as a solution form for the deflection of layered functionally graded beams associated with smart actuators, drawing on the fundamental principles of classical Fourier series theory. The current method simplifies the difficult beam problem to a set of linear algebraic equations by using the Duhamel integration technique and the orthogonality of the trial function. The study takes into account generalized boundary conditions and moving forces, which are seldom discussed in previous research. Under the action of a moving load, the boundary value problem for a functionally graded beam integrated with Terfenol-D is efficiently addressed using the approach of combined differential and integral quadrature. The generalized boundary conditions may be easily achieved by adjusting the stiffness of the restraining springs. The significant agreement between the differential quadrature solution and the Fourier series solution underlines the efficiency and accuracy of both methods. Furthermore, the influences of various crucial physical characteristics on the natural frequencies and the essential flow velocities are explored, including boundary stiffness, foundation parameters, and geometric parameters. © 2024 Taylor & Francis Group, LLC.Item Influence of V2O5 addition as a dopant and dispersed content in barium borophosphate glass on structural and optical properties(Elsevier Ltd, 2024) Rashmi, I.; Ingle, A.; Raghuvanshi, V.; Shashikala, H.D.; Nagaraja, H.S.The Barium Borophosphate glass system with molar compositions 40P2O5– 25B2O3-(35-x) BaO-xV2O5 and 40P2O5–25B2O3–35BaO-xV2O5 (x = 0,1,3,5 mol%) was synthesized using melt-quenching method. A comprehensive investigation of the structural and optical properties was conducted to compare the effects of V2O5 as a dopant and as an addition to the glass matrix. The physical parameters were assessed through the measurement of density. The influence of V2O5 introduction on vibrational modes was studied through Fourier-transform infrared (FTIR) and Raman spectroscopy. The UV–visible absorbance analysis unveiled the existence of multiple valence states of vanadium (V3+, V4+ and V5+). The reduction in bandgap was determined through the utilization of a Tauc plot, while the measurement of the refractive index allowed for the assessment of its variation with the composition of V2O5. Photoluminescence spectroscopy (PL) was employed to explore the presence of intrinsic defects within the glass matrix and the impact of V2O5 on the emission spectra. Furthermore, CIE chromaticity coordinates of synthesized samples were observed in both the white and blue regions, suggesting their potential application in display devices. Significantly, V2O5 glass doped with 1 mol% displayed chromaticity, characterized by CIE coordinates x = 0.288 and y = 0.386, closely matching the white region as well as the bandpass filter. The introduction of transition metal oxide dopants into borophosphate glass yielded exceptional emission properties. The ability to modify optical properties makes it more promising for these glass materials, particularly for applications like optical filters and displays. © 2024 Elsevier Ltd and Techna Group S.r.l.Item An improved Fourier series-based analytical model for threshold voltage and sub-threshold swing in SOI junctionless FinFET(Elsevier Ltd, 2024) Mathew, S.; Chennamadhavuni, S.; Rao, R.In this work, Fourier series-based analytical models for threshold voltage (Vth) and Sub-threshold Swing (SS) are developed for Junctionless Fin Field Effect Transistor (JLFinFET) on Silicon On Insulator (SOI) substrate, taking into account the location of the onset of current conduction in the channel. Rigorous simulations were conducted to analyse the current conduction path when JLFinFET surpasses the threshold voltage. Based on the findings from these simulations, threshold voltage condition used for deriving the threshold voltage model is modified. This modified model gives a better prediction of Vth for JLFinFET than the already existing model which doesn't include approximations based on the location of onset of current conduction. The analytical model developed for SS is also capable of closely predicting the SS of JLFinFET obtained from the TCAD simulator down to a gate length of 20 nm. © 2024 Elsevier LtdItem Fixed-frequency modified gating signals controlled high-frequency isolated LCL-T DC-DC resonant power converter(Taylor and Francis Ltd., 2025) Reddy, V.B.; Ur Rehman, M.B.; Srinivas, B.; Nagendrappa, N.In this paper, a fixed-frequency modified gating signals controlled LCL-T type of resonant power converter is proposed. The converter is designed to operate in lagging power factor (pf) mode to ensure zero-voltage switching (ZVS) of the inverter switches. Steady-state analysis of the converter is carried out using the Fourier series approach by considering the effect of n-harmonics. A 300 W converter is designed, and its performance is studied using PSIM simulations. It is shown that all inverter switches turn-on with ZVS for entire loading conditions with the minimum input voltage, while only one switch loses ZVS when the input voltage is maximum. Also, a small change in pulse width is enough to regulate the output voltage for wide variations in the input voltage and the load. Power loss breakdown analysis is performed. The experimental prototype of the LCL-T resonant converter is built and tested to validate the theoretical and simulation results. The results have been compared and discussed. © 2024 Informa UK Limited, trading as Taylor & Francis Group.Item Fourier Series-Based Analytical Model for Channel Potential of Dual Material Gate SOI Junctionless FinFET(Springer, 2025) Mathew, S.; Rao, R.In this article, a robust Fourier series based analytical model for channel potential is derived for a Dual Material Gate Junctionless Fin Field Effect Transistor (DMG JLFinFET) on a Silicon-On-Insulator (SOI) substrate. For most of the regions in the cuboidal channel, especially at the location where the onset of current conduction happens, the channel potential model developed in this work matches very well with the potential obtained from TCAD simulations. The analytical model presented in this article is capable of calculating the channel potential of the DMG JLFinFETs for most of the channel region, considering various device parameters such as channel length, fin height, and fin width, with a maximum deviation of 0.07 V. However, for channel regions very close to buried oxide, the channel potential model over-predicts potential obtained through simulation by around 0.1 V. In most of the cases of varying device parameters, the Fourier series-based potential model developed in this work accurately predicts channel potential at the location of the onset of current conduction. Hence, it can be used to model various device parameters such as threshold voltage and sub-threshold swing. © The Minerals, Metals & Materials Society 2025.