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Subject: search.filters.subject.Channel potential model

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    An improved Fourier series-based analytical model for threshold voltage and sub-threshold swing in SOI junctionless FinFET
    (Elsevier Ltd, 2024) Mathew, S.; Chennamadhavuni, S.; Rao, R.
    In this work, Fourier series-based analytical models for threshold voltage (Vth) and Sub-threshold Swing (SS) are developed for Junctionless Fin Field Effect Transistor (JLFinFET) on Silicon On Insulator (SOI) substrate, taking into account the location of the onset of current conduction in the channel. Rigorous simulations were conducted to analyse the current conduction path when JLFinFET surpasses the threshold voltage. Based on the findings from these simulations, threshold voltage condition used for deriving the threshold voltage model is modified. This modified model gives a better prediction of Vth for JLFinFET than the already existing model which doesn't include approximations based on the location of onset of current conduction. The analytical model developed for SS is also capable of closely predicting the SS of JLFinFET obtained from the TCAD simulator down to a gate length of 20 nm. © 2024 Elsevier Ltd
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    Fourier Series-Based Analytical Model for Channel Potential of Dual Material Gate SOI Junctionless FinFET
    (Springer, 2025) Mathew, S.; Rao, R.
    In this article, a robust Fourier series based analytical model for channel potential is derived for a Dual Material Gate Junctionless Fin Field Effect Transistor (DMG JLFinFET) on a Silicon-On-Insulator (SOI) substrate. For most of the regions in the cuboidal channel, especially at the location where the onset of current conduction happens, the channel potential model developed in this work matches very well with the potential obtained from TCAD simulations. The analytical model presented in this article is capable of calculating the channel potential of the DMG JLFinFETs for most of the channel region, considering various device parameters such as channel length, fin height, and fin width, with a maximum deviation of 0.07 V. However, for channel regions very close to buried oxide, the channel potential model over-predicts potential obtained through simulation by around 0.1 V. In most of the cases of varying device parameters, the Fourier series-based potential model developed in this work accurately predicts channel potential at the location of the onset of current conduction. Hence, it can be used to model various device parameters such as threshold voltage and sub-threshold swing. © The Minerals, Metals & Materials Society 2025.