Faculty Publications
Permanent URI for this communityhttps://idr.nitk.ac.in/handle/123456789/18736
Publications by NITK Faculty
Browse
2 results
Search Results
Item 91dB dynamic range 9.5nW low pass filter for bio-medical applications(IEEE Computer Society help@computer.org, 2018) Jayaram Reddy, M.K.; Polineni, S.; Laxminidhi, L.This paper presents a second order, fully differential, low pass filter. The filter has a tunable bandwidth in the range 4 Hz to 100 Hz and offers a dynamic range of 91 dB. The filter is based on the source-follower biquad operating in the sub-Threshold region. The main idea is to exploit the strengths of sub-Threshold source follower circuit, like low noise, low output impedance, high linearity and low power. The filter design has been validated in UMC 0.18 um CMOS process. The filter consumes only 9.5 nW of power at 1.8 V supply, making it suitable for bio-medical applications. In terms of noise and dynamic range the reported filter is better than previous works found from the literature. © 2018 IEEE.Item An Ultra-low Noise, Highly Compact Implantable 28 nm CMOS Neural Recording Amplifier(Institute of Electronics Engineers of Korea, 2024) Akuri, N.G.; Naik, D.N.; Kumar, S.; Song, H.; Kar, A.An ultra-low noise, Tera-ohm input impedance two-stage front-end neural amplifier (FENA) in the 28 nm CMOS process is presented in this work. As per the author’s best knowledge, the proposed FENA is implemented on a 28 nm CMOS process for the first time. The proposed FENA consists of an operational transconductance amplifier integrated low-pass filter (LPF) technique. This technique effectively removes the noise current density by using the LPF transfer function and FENA circuit to achieve the best performances, such as ultra-low input-referred noise, ultra-high input impedance, and high gain. The proposed mathematical technique is employed to optimize the dimensions of the neural amplifier in the 28 nm lower node, which results in a noise-free biasing current and ultra-low input referred noise of 18 fV/√Hz at 10 KHz. The ultra-low input referred noise of FENA is achieved by reducing the gate-distributed resistance method. The FENA achieves an ultra-high input impedance of 0.2 Tera-ohm, while a splendid measured gain of 60 dB has succeeded. FENA occupies a chip area of 0.0023 mm2, which consumes a lower power consumption of 1 µW under supply voltage of 1.2 V. The FENA is found to be less prone to PVT variations as 1 mHz of high-pass corner frequency towards robust design. The best performance parameters of FENA could be beneficial for deep exploration neural recording in wireless neural monitoring systems. © 2024, Institute of Electronics Engineers of Korea. All rights reserved.