Faculty Publications

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Subject: search.filters.subject.Amorphous alloys

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    Solid state amorphization of Mg-Zn-Ca system via mechanical alloying and characterization
    (Elsevier B.V., 2017) Manne, B.; Bontha, S.; Ramesh, M.R.; Krishna, M.; Balla, V.K.
    Magnesium based bulk metallic glasses have attracted significant attention of researchers due to better mechanical and corrosion properties when compared to their crystalline counterparts especially for biomedical applications. Scaling up the part size and production volumes of such materials through liquid metallurgy route is challenging. In this work amorphous Ca5Mg60+xZn35?x (X = 0, 3 and 7) alloys have been successfully synthesized through solid state amorphization using a high energy planetary ball mill. X-ray diffraction was used to identify the crystalline phases of the powder during reaction. Evolution of amorphous phase was analysed using a parameter involving the ratio of integral area of peaks to the integral area of background (IPB) obtained from XRD patterns. Results showed reaction time increases with decreasing Zn content in Ca5Mg60+xZn35?x (X = 0, 3 and 7) alloy to obtain maximum amorphous structure with a small amount of residual crystalline phase. Prolonged milling of these powders, to eliminate residual crystalline phases, resulted in the nucleation of Mg102.08Zn39.6 phase. The composition dependent characteristic temperatures and thermal stabilities were studied using differential scanning calorimetry. © 2016 The Society of Powder Technology Japan
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    Investigation of Indium doped Se-Te bulk chalcogenide glasses for electrical switching and phase changing applications
    (Elsevier Ltd, 2024) Joshi, S.; Rodney, J.D.; James, A.; Behera, P.K.; Udayashankar, N.K.
    Recently, Metal-doped Se-Te chalcogenides have gained a lot of interest due to their unique capacity for electrical switching, which makes them desirable for electronic applications. This study examines the electrical switching characteristics of bulk Se86−xTe14Inx (0 ≤ x ≤ 6) amorphous alloys produced by the conventional melt-mix-quench process. The samples with an Indium atomic percentage between 2 to 6 exhibited a remarkable transition from a highly resistive to a low resistive state when subjected to an electric field with a current of 1 mA, displaying quick and reversible switching behaviour. The threshold voltage (Vth) significantly dropped from 410.6 V to 49.2 V with an increase in Indium concentration. Additionally, above the specific current threshold, these bulk glasses demonstrated memory-type switching, demonstrating their potential for data storage applications. To comprehend the trend of glass forming ability, thermal stability range and Hruby's glass stability parameters, with their compositional dependency, Differential Scanning Calorimetry (DSC) was utilized. The sample Se80Te14In6 emerged to be the fastest phase-changing material, with a memory switching current threshold of Ith = 1.3 mA and a threshold voltage value of 49.2 V. To study the formation of crystallites in Se-Te-In alloy, X-ray diffraction patterns of pristine glass and the annealed sample were examined. Furthermore, temperature-dependent conductivity investigations showed a sharp rise in conductivity once the process crystallization begins (Tx), and also the threshold voltage (Vth) of the samples decreased linearly with rising temperature. Overall, this study provides valuable insights into the electrical switching behaviour and thermal properties of Se-Te-In chalcogenide glasses, enhancing their suitability in electronic devices. © 2024 Elsevier B.V.