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    Mechanical Instabilities in 2D-SiC with Defects
    (American Institute of Physics Inc., 2023) Madhusoodanan, M.; Narayanan, M.K.; Madam, A.K.
    Elasticity of material is important in understanding the elastic deformation, to flexure, to strain softening. Elastic properties provide the measure of resistance of a system to elastic deformation thus validating its structural stability. Understanding the elasticity of a material is important in understanding their response to any external perturbations. This is required for their synthesis and practical applications. Mechanical stability is determined through the knowledge of second order elastic constants (SOEC) and the higher order elastic constants are necessary to understand the non-linear, anharmonic behaviors. A material is said to be mechanically stable satisfying the Born stability criteria. Here, 2D-SiC, a silicene derivative is introduced with point and topological defects to understand its variation in mechanical properties. Defects namely, mono-, bi- and Stone-Wales types are incorporated into SiC. Computed values of elastic constants implied mechanical instability for C removed monovacancy. All other configurations implied mechanical stability satisfying Born criteria. © 2023 American Institute of Physics Inc.. All rights reserved.
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    Strain induced anisotropic mechanical and electronic properties of 2D-SiC
    (Elsevier B.V., 2018) Manju, M.S.; Ajith, K.M.; Valsakumar, M.C.
    A silicene derivative of the form SiC was thoroughly investigated on its behaviour with changes in stress varying from around 140 N/m to around 20 N/m and strain from ?0.2 to 0.3. Uniaxial stress (both zigzag and armchair) brought structural changes which reduced the symmetry of the system but biaxial stress brought no change in symmetry and shape of the material. Mechanical stability of the system was maintained upto a considerable stress in both uni- and biaxial cases and the system showed anisotropic behaviour with stress variations. Electronic structural variations showed strain engineering is a convenient method to tune the band gap very effectively causing semiconducting SiC to transform to metallic one at large stresses and direct to indirect bandgap in the semiconducting phase at lower stress. Charge density analysis showed a significant ionic nature of the material in the semiconducting phase. © 2018 Elsevier Ltd